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BS170/D PDF预览

BS170/D

更新时间: 2024-11-15 23:35:43
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
4页 55K
描述
Small Signal MOSFET 500 mAmps, 60 Volts

BS170/D 数据手册

 浏览型号BS170/D的Datasheet PDF文件第2页浏览型号BS170/D的Datasheet PDF文件第3页浏览型号BS170/D的Datasheet PDF文件第4页 
BS170  
Preferred Device  
Small Signal MOSFET  
500 mAmps, 60 Volts  
N–Channel TO–92  
MAXIMUM RATINGS  
http://onsemi.com  
Rating  
Drain–Source Voltage  
Symbol  
Value  
Unit  
500 mAMPS  
60 VOLTS  
V
DS  
60  
Vdc  
Gate–Source Voltage  
– Continuous  
V
±20  
±40  
Vdc  
Vpk  
GS  
R
= 5  
DS(on)  
– Non–repetitive (t 50 µs)  
V
GSM  
p
N–Channel  
Drain Current (Note 1.)  
I
0.5  
Adc  
mW  
°C  
D
D
Total Device Dissipation @ T = 25°C  
P
350  
A
D
Operating and Storage Junction  
Temperature Range  
T , T  
stg  
–55 to  
+150  
J
1. The Power Dissipation of the package may result in a lower continuous drain  
current.  
G
S
TO–92  
CASE 29  
Style 30  
1
2
3
MARKING DIAGRAM  
& PIN ASSIGNMENT  
BS170  
YWW  
1
3
Drain  
Source  
2
Gate  
Y
WW  
= Year  
= Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
November, 2000 – Rev. 2  
BS170/D  

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