Datasheet > BS170

BS170

更新时间： 2024-11-29 22:39:39

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
5页	235K
描述
DMOS Transistors (N-Channel)

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中文翻译

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技术参数
数据手册

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BS170 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.64	配置：	Single
最大漏极电流 (Abs) (ID)：	0.3 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.83 W	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

BS170 数据手册

BS170

DMOS Transistors (N-Channel)

FEATURES

TO-92

.142 (3.6)

.181 (4.6)

♦

High input impedance

High-speed switching

No minority carrier storage time

CMOS logic compatible input

No thermal runaway

No secondary breakdown

.022 (0.55)

.098 (2.5)

max

MECHANICAL DATA

Case: TO-92 Plastic Package

Weight: approx. 0.18 g

On special request, this transistor is also manufactured

in the pin configuration TO-18.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at

ambient temperature unless otherwise specified

25 °C

Symbol

Value

Unit

Drain-Source Voltage

DSS

Drain-Gate Voltage

DGS

Gate-Source Voltage (pulsed)

Drain Current (continuous)

± 20

300

Power Dissipation at T

= 25 °C

tot

0.83¹⁾

150

amb

Junction Temperature

°C

Storage Temperature Range

–65 to +150

¹⁾Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.

Inverse Diode

Symbol

Value

Unit

Max. Forward Current (continuous)

at T = 25 °C

0.5

amb

Forward Voltage Drop (typ.)

at V = 0, I = 0.5 A, T = 25 °C

0.85

4/98

12 3 4 5

中文翻译

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与BS170相关器件

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BS170/D	ETC	获取价格	Small Signal MOSFET 500 mAmps， 60 Volts
BS170/E6	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 300MA I(D) \| TO-226AA
BS170/E7	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 300MA I(D) \| TO-226AA
BS170_01	FAIRCHILD	获取价格	N-Channel Enhancement Mode Field Effect Transistor
BS170_05	ONSEMI	获取价格	Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 (TO−226)
BS170_D26Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
BS170_D27Z	FAIRCHILD	获取价格	N-Channel Enhancement Mode Field Effect Transistor, 3LD, TO-92, MOLDED, 0.200 IN LINE SPAC
BS170A	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
BS170-A	DIODES	获取价格	300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
BS170AMO	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 500MA I(D) \| TO-92