Datasheet > BS123

BS123

更新时间： 2024-11-18 22:27:55

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
2页	41K
描述
DMOS Transistors (N-Channel)

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BS123 数据手册

BS123

DMOS Transistors (N-Channel)

FEATURES

TO-92

.142 (3.6)

.181 (4.6)

♦

High input impedance

Low gate threshold voltage

Low drain-source ON resistance

High-speed switching

No minority carrier storage time

CMOS logic compatible input

No thermal runaway

No secondary breakdown

.022 (0.55)

.098 (2.5)

max

MECHANICAL DATA

Case: TO-92 Plastic Package

Weight: approx. 0.18 g

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at

ambient temperature unless otherwise specified

25 °C

Symbol

Value

Unit

Drain-Source Voltage

DSS

Drain-Gate Voltage

DGS

Gate-Source Voltage (pulsed)

±20

Drain Current (continuous) at T ¹⁾= 25 °C, at T ²⁾= 50 °C

1.1

amb

Power Dissipation at T ¹⁾= 25 °C, at T ²⁾= 50 °C

830¹⁾

150

°C

amb

tot

Junction Temperature

Storage Temperature Range

–65 to +150

¹⁾Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case (for TO-92).

4/98

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