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BS107P

更新时间: 2025-07-25 22:27:55
品牌 Logo 应用领域
捷特科 - ZETEX /
页数 文件大小 规格书
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描述
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

BS107P 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:IN-LINE, R-PSIP-W3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.06配置:SINGLE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):0.12 A
最大漏极电流 (ID):0.12 A最大漏源导通电阻:23 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-W3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.5 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BS107P 数据手册

  
N-CHANNEL ENHANCEMENT  
MODE VERTICAL DMOS FET  
BS107P  
ISSUE 2 – SEPT 93  
FEATURES  
*
*
200 Volt VDS  
RDS(on)=23  
D
G
S
REFER TO BS107PT FOR GRAPHS  
E-Line  
TO92 Com patible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
V
Drain-Source Voltage  
V
200  
0.12  
DS  
Continuous Drain Current at T  
=25°C  
I
A
am b  
D
Pulsed Drain Current  
I
2
A
DM  
Gate-Source Voltage  
V
V
±20  
GS  
Power Dissipation at T  
=25°C  
P
500  
m W  
°C  
am b  
tot  
Operating and Storage Tem perature Range  
T :T  
-55 to +150  
j
stg  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C)  
am b  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX.  
UNIT  
CONDITIONS.  
I =100µA, V =0V  
Drain-Source  
Breakdown Voltage  
BV  
200  
230  
V
DSS  
D
GS  
Gate Body Leakage  
Drain Cut-Off Current  
Drain Cut-Off Current  
I
10  
30  
1
nA  
nA  
µA  
VGS=15V, V =0V  
DS  
GSS  
I
V
=0V, V =130V  
DSS  
GS DS  
I
V
=0.2V, V =70V  
DSX  
GS DS  
Static Drain-Source  
on-State Resistance  
R
15  
23  
30  
V
=2.6V, I =25m A*  
=5V, I =100m A*  
D
DS(on)  
GS D  
V
GS  
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
3-23  

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