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BRY55-30 PDF预览

BRY55-30

更新时间: 2024-09-23 22:10:19
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 触发装置可控硅整流器
页数 文件大小 规格书
4页 91K
描述
SCRs 0.8 AMPERE RMS 30 TO 600 VOLTS

BRY55-30 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.83
Is Samacsys:N标称电路换相断开时间:30 µs
配置:SINGLE最大直流栅极触发电流:0.2 mA
最大直流栅极触发电压:0.8 V最大维持电流:5 mA
JEDEC-95代码:TO-226AAJESD-30 代码:O-PBCY-T3
JESD-609代码:e0最大漏电流:0.1 mA
通态非重复峰值电流:8 A元件数量:1
端子数量:3最大通态电压:1.7 V
最大通态电流:800 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:0.8 A断态重复峰值电压:30 V
重复峰值反向电压:30 V子类别:Silicon Controlled Rectifiers
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

BRY55-30 数据手册

 浏览型号BRY55-30的Datasheet PDF文件第2页浏览型号BRY55-30的Datasheet PDF文件第3页浏览型号BRY55-30的Datasheet PDF文件第4页 
Order this document  
by BRY55-30/D  
SEMICONDUCTOR TECHNICAL DATA  
PNPN devices designed for high volume, line-powered consumer applications such  
as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and  
sensing and detection circuits. Supplied in an inexpensive TO-226AA (TO-92)  
package which is readily adaptable for use in automatic insertion equipment.  
SCRs  
0.8 AMPERE RMS  
30 TO 600 VOLTS  
Sensitive Gate Trigger Current — 200 µA Maximum  
Low Reverse and Forward Blocking Current — 100 µA Maximum, T = 125°C  
Low Holding Current — 5 mA Maximum  
Glass-Passivated Surface for Reliability and Uniformity  
C
CASE 29-04  
(TO-226AA)  
STYLE 3  
WITH TO-18 LEADFORM*  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
, V  
Value  
Unit  
(1)  
Peak Repetitive Forward and Reverse Blocking Voltage  
V
Volts  
RRM DRM  
(R = 1000 , T = 25 to 125°C)  
Marking: BRY55-1 . . . BRY55-30  
-2 . . . BRY55-60  
GK  
J
30  
60  
-3 . . . BRY55-100  
-4 . . . BRY55-200  
-6 . . . BRY55-400  
-7 . . . BRY55-500  
100  
200  
400  
500  
600  
-8 . . . BRY55-600  
Forward Current RMS (All Conduction Angles)  
I
0.8  
8
Amp  
T(RMS)  
Peak Forward Surge Current, T = 25°C  
I
Amps  
A
TSM  
(1/2 Cycle, Sine Wave, 60 Hz)  
2
I t  
2
A s  
Circuit Fusing Considerations, T = 25°C  
(t = 8.3 ms)  
0.15  
A
Peak Gate Power — Forward, T = 25°C  
P
0.1  
1
Watt  
Amp  
A
GM  
Peak Gate Current Forward, T = 25°C  
I
GFM  
A
(300 µs, 120 PPS)  
Peak Gate Voltage — Reverse  
Operating Junction Temperature Range @ Rated V  
Storage Temperature Range  
V
5
Volts  
°C  
GRM  
and V  
DRM  
T
J
–40 to +125  
–40 to +150  
+230  
RRM  
T
°C  
stg  
Lead Solder Temperature ( 1.5 mm from case, 10 s max.)  
*European part numbers only. Package is Case 29 with Leadform 18.  
1. V and V for all types canbe appliedon a continuous basis. Ratings apply for zeroor negativegate voltage;however, positivegate  
°C  
DRM  
RRM  
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current  
source such that the voltage ratings of the devices are exceeded.  
Motorola, Inc. 1995  

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