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BR93LL46FV-W PDF预览

BR93LL46FV-W

更新时间: 2024-11-17 13:05:59
品牌 Logo 应用领域
罗姆 - ROHM 内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
11页 114K
描述
EEPROM, 64X16, Serial, CMOS, PDSO8, SSOP-8

BR93LL46FV-W 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:LSSOP,
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.84最大时钟频率 (fCLK):1 MHz
JESD-30 代码:R-PDSO-G8JESD-609代码:e2
长度:4.4 mm内存密度:1024 bit
内存集成电路类型:EEPROM内存宽度:16
功能数量:1端子数量:8
字数:64 words字数代码:64
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64X16
封装主体材料:PLASTIC/EPOXY封装代码:LSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.25 mm
串行总线类型:MICROWIRE最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN COPPER
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:10
宽度:3 mm最长写入周期时间 (tWC):25 ms
Base Number Matches:1

BR93LL46FV-W 数据手册

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Memory ICs  
1,024-Bit Serial Electrically Erasable PROM  
BR93LL46F / BR93LL46FV  
Features  
Pin assignments  
• Low power CMOS technology  
• 64 × 16 bit configuration  
N.C.  
VCC  
CS  
N.C.  
GND  
DO  
1
2
3
4
8
7
6
5
• 1.8V to 4.0V operation  
BR93LL46F  
BR93LL46FV  
• Low power dissipation  
– 0.5mA (typ.) active current  
SK  
DI  
– 0.4µA (typ.) standby current  
• Auto increment for efficient data dump  
• Automatic erase-before-write  
(SOP8 / SSOP-B8)  
• Hardware and software write protection  
– Defaults to write-disabled state at power up  
– Software instructions for write-enable / disable  
– Vcc lockout inadvertent write protection  
• 8-pin SOP / 8-pin SSOP-B packages  
• Device status signal during write cycle  
• 100,000 ERASE / WRITE cycles  
• 10 years Data Retention  
Pin descriptions  
Pin Name  
Function  
N.C.  
VCC  
CS  
Not connected  
Power supply  
Chip select input  
SK  
Serial clock input  
Start bit, operating code, address, and  
serial data input  
DI  
Serial data output, READY / BUSY  
internal status display output  
DO  
GND  
N.C.  
Ground  
Not connected  
Overview  
The BR93LC46F and BR93LL46FV are CMOS serial input / output-type memory circuits (EEPROMs) that can be  
programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed indi-  
vidually and data read from it and written to it. Operation control is performed using five types of commands. The  
commands, addresses, and data are input through the DI pin under the control of the CS and SK pins. In a write  
operation, the internal status signal (READY or BUSY) can be output from the DO pin.  
1

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