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BR810DLG PDF预览

BR810DLG

更新时间: 2024-11-21 13:43:23
品牌 Logo 应用领域
美台 - DIODES 二极管
页数 文件大小 规格书
1页 89K
描述
Bridge Rectifier Diode, 2A, 1000V V(RRM),

BR810DLG 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.86
配置:BRIDGE, 4 ELEMENTS二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-609代码:e0
最大非重复峰值正向电流:50 A元件数量:4
最高工作温度:150 °C最大输出电流:2 A
最大重复峰值反向电压:1000 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

BR810DLG 数据手册

  

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