Datasheet > BR81

BR81

更新时间： 2024-01-08 12:51:11

品牌	Logo	应用领域
平伟 - PINGWEI		二极管
页数	文件大小	规格书
1页	43K
描述
SINGLE-PHASE SILICON BRIDGE RECTIFIER

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获取价格

技术参数
数据手册

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BR81 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.86
配置：	BRIDGE, 4 ELEMENTS	二极管类型：	BRIDGE RECTIFIER DIODE
最大正向电压 (VF)：	1 V	JESD-609代码：	e0
最大非重复峰值正向电流：	50 A	元件数量：	4
最高工作温度：	150 °C	最大输出电流：	2 A
最大重复峰值反向电压：	100 V	子类别：	Bridge Rectifier Diodes
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

BR81 数据手册

CHONGQING PINGYANG ELECTRONICS CO.,LTD.

BR805 THRU BR810

SINGLE-PHASE SILICON BRIDGE RECTIFIER

VOLTAGE：50-1000V

CURRENT：8.0A

FEATURES

·Surge overload ratings-125 Amperes

·Low forward voltage drop

KBPC-8/10

.296(7.5)

.255(6.5)

.052(1.3) DIA.

.048(1.2) TYP.

.750

_(19.1)MIN.

.770(19.6)

.730(18.5)

.520(13.2)

.480(12.2)

HOLE FOR

NO. 6 SCREW

MECHANICAL DATA

·Case:Metal or plastic shell with plastic encapsulation

·Epoxy: UL 94V-0 rate flame retardant

·Lead: MIL-STD- 202E, Method 208 guaranteed

·Polarity: Symbols molded or marked on body

·Mounting: Thru hole for 6# screw

.770(19.6)

.730(18.5)

.520(13.2)

.480(12.2)

Dimensions in inches and (millimeters)

·Weight: 6.9 grams

MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

BR805 BR81 BR82 BR84 BR86 BR88 BR810 units

SYMBOL

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

600

420

600

800 1000

560 700

800 1000

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage

100

Maximum Average Forward rectified Output

Current at T_C=75°C

I_o

8.0

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rate load (JEDEC

method)

I_FSM

V_F

I_R

250

Maximum Forward Voltage Drop per element at

4.0A DC

1.1

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@ T_A=25°C

µA

500

166

200

@ T_A=100°C

per element

I²t

C_J

A²S_ec

I²t Rating for Fusing (t<8.3ms)

Typical Junction Capacitance (Note 1)

Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts

2. Thermal Resistance from Junction to Ambient and fromjunction to lead mounted on P.C.B. with

0.5×0.5”(13×13mm) copper pads.

１

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