5秒后页面跳转
BR808 PDF预览

BR808

更新时间: 2024-09-23 22:27:51
品牌 Logo 应用领域
EIC 整流二极管
页数 文件大小 规格书
2页 21K
描述
SILICON BRIDGE RECTIFIERS

BR808 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
风险等级:5.73Is Samacsys:N
配置:BRIDGE, 4 ELEMENTS二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 V最大非重复峰值正向电流:300 A
元件数量:4最大输出电流:8 A
最大重复峰值反向电压:800 V子类别:Bridge Rectifier Diodes
表面贴装:NOBase Number Matches:1

BR808 数据手册

 浏览型号BR808的Datasheet PDF文件第2页 
SILICON BRIDGE RECTIFIERS  
BR800 - BR810  
BR10  
PRV : 50 - 1000 Volts  
Io : 8.0 Amperes  
0.520 (13.20)  
0.480 (12.20)  
0.158 (4.00)  
AC  
0.142 (3.60)  
FEATURES :  
* High current capability  
* High surge current capability  
* High reliability  
* Low reverse current  
* Low forward voltage drop  
* Ideal for printed circuit board  
0.77 (19.56)  
0.73 (18.54)  
0.290 (7.36)  
0.210 (5.33)  
AC  
0.052 (1.32)  
0.048 (1.22)  
MECHANICAL DATA :  
0.75 (19.1)  
Min.  
* Case : Reliable low cost construction  
utilizing molded plastic technique  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per  
MIL - STD 202 , Method 208 guaranteed  
* Polarity : Polarity symbols marked on case  
* Mounting position : Any  
0.30 (7.62)  
0.25 (6.35)  
Dimensions in inches and ( millimeters )  
* Weight : 6.1 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
°
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL BR800 BR801 BR802 BR804 BR806 BR808 BR810 UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
RRM  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
8.0  
600  
420  
600  
800  
560  
800  
1000  
700  
Volts  
Volts  
V
VRMS  
VDC  
Maximum DC Blocking Voltage  
100  
1000  
Volts  
°
F(AV)  
I
Amps.  
Maximum Average Forward Current Tc=50 C  
Peak Forward Surge Current Single half sine wave  
Superimposed on rated load (JEDEC Method)  
FSM  
300  
160  
Amps.  
A2S  
I
I2t  
Current Squared Time at t < 8.3 ms.  
Maximum Forward Voltage per Diode at IF = 4.0 Amp.  
F
V
1.0  
Volts  
°
Ta = 25 C  
IR  
10  
mA  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Typical Thermal Resistance (Note 1)  
°
R(H)  
200  
m
A
Ta = 100 C  
I
q
2.5  
°
C/W  
R JC  
Operating Junction Temperature Range  
Storage Temperature Range  
J
- 40 to + 150  
- 40 to + 150  
°
C
T
°
C
TSTG  
Notes :  
1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" THK  
(8.2cm.x 8.2cm.x 0.3cm.) Al. Plate. heatsink.  
UPDATE : APRIL 23, 1998  

与BR808相关器件

型号 品牌 获取价格 描述 数据表
BR808G GOOD-ARK

获取价格

GLASS PASSIVATED BRIDGE RECTIFIERS
BR808G HY

获取价格

GLASS PASSIVATED BRIDGE RECTIFIERS
BR80N08A FOSHAN

获取价格

TO-220
BR81 PINGWEI

获取价格

SINGLE-PHASE SILICON BRIDGE RECTIFIER
BR81 PFS

获取价格

SINGLE-PHASE BRIDGE RECTIFIER
BR81 LGE

获取价格

Silicon Bridge Rectifiers
BR81 UNIOHM

获取价格

SINGLE PHASE 8.0 AMP BRIDGE RECTIFIERS
BR81 GOOD-ARK

获取价格

SINGLE-PHASE SILICON BRIDGE
BR81 BYTESONIC

获取价格

SINGLE PHASE 8.0 AMP BRIDGE RECTIFIERS
BR81 FORMOSA

获取价格

SINGLE PHASE 8.0 AMP BRIDGE RECTIFIERS