BR808

更新时间： 2024-01-30 08:49:18

品牌	Logo	应用领域
固锝 - GOOD-ARK		整流二极管桥式整流二极管
页数	文件大小	规格书
2页	91K
描述
SILICON BRIDGE RECTIFIERS

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中文翻译

获取价格

技术参数
数据手册

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BR808 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.73
Is Samacsys：	N	二极管类型：	BRIDGE RECTIFIER DIODE
Base Number Matches：	1

BR808 数据手册

BR8 SERIES

REVERSE VOLTAGE

50 to 1000Volts

SILICON BRIDGE RECTIFIERS

FORWARD CURRENT - 8.0 Amperes

BR8

FEATURES

.296(7.5)

.255(6.5)

● Surge overload rating -200 amperes peak

● Low forward voltage drop

● Small size; simple installation

● Sliver plated copper leads

.750

(19.0)

MIN

● Mounting position: Any

.052(1.3)

.048(1.2)

DIA.

HOLE FOR

NO.6 SCREW

.770(19.6)

.730(18.5)

.520(13.2)

.480(12.2)

.770(19.6)

.730(18.5)

.520(13.2)

.480(12.2)

Polarity shown on side of case, Positive lead by beveled corner.

Dimensions in inches and (milimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

SYMBOL BR8005 BR801

BR802

BR804

400

BR806

600

BR808

800

BR810

1000

700

UNIT

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Bridge Input Voltage

VRRM

VRMS

100

200

140

280

420

560

Maximum Average Forward

Rectified Output Current at

Peak Forward Surage Current

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load

Tc=100℃ (Note1)

TA=40℃ (Note2)

8.0

3.0

I(AV)

IFSM

200

Maximum Forward Voltage Drop

1.0

Per Bridge Element at 4.0A Peak

10.0

1.0

Maximum Reverse Current at Rated TA=25℃

μA

DC Blocking Voltage Per Element

Operating Temperature Range

TA=100℃

-55 to +125

℃

Storage Temperature Range

TSTG

Notes:1.Unit mounted on metal chassis

2. Unit mounted on P.C. board

中文翻译

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