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BR610 PDF预览

BR610

更新时间: 2024-09-23 22:27:51
品牌 Logo 应用领域
EIC 整流二极管桥式整流二极管
页数 文件大小 规格书
2页 42K
描述
SILICON BRIDGE RECTIFIERS

BR610 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
风险等级:5.71Is Samacsys:N
配置:BRIDGE, 4 ELEMENTS二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1 V最大非重复峰值正向电流:250 A
元件数量:4最高工作温度:150 °C
最大输出电流:6 A最大重复峰值反向电压:1000 V
子类别:Bridge Rectifier Diodes表面贴装:NO
Base Number Matches:1

BR610 数据手册

 浏览型号BR610的Datasheet PDF文件第2页 
SILICON BRIDGE RECTIFIERS  
BR600 - BR610  
PRV : 50 - 1000 Volts  
Io : 6.0 Amperes  
BR6  
0.445 (11.30)  
0.405 (10.30)  
0.158 (4.00)  
AC  
0.142 (3.60)  
FEATURES :  
* High current capability  
* High surge current capability  
* High reliability  
0.62 (15.75)  
0.58 (14.73)  
0.127 (3.20)  
* Low reverse current  
* Low forward voltage drop  
* Ideal for printed circuit board  
0.047 (1.20)  
AC  
0.042 (1.06)  
0.038 (0.96)  
MECHANICAL DATA :  
0.75 (19.1)  
Min.  
* Case : Reliable low cost construction  
utilizing molded plastic technique  
* Epoxy : UL94V-O rate flame retardant  
0.27 (6.9)  
0.23 (5.8)  
* Lead : Axial lead solderable per  
MIL - STD 202 , Method 208 guaranteed  
* Polarity : Polarity symbols marked on case  
* Mounting position : Any  
Dimensions in inches and ( millimeters )  
* Weight : 3.6 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 C ambient temperature unless otherw ise specified.  
°
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SYMBOL BR600 BR601 BR602 BR604 BR606 BR608 BR610  
UNITS  
RATING  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
6.0  
600  
420  
600  
800  
560  
800  
1000 Volts  
700  
Volts  
Maximum DC Blocking Voltage  
100  
1000 Volts  
Amps.  
Maximum Average Forward Current Tc=50 C  
IF(AV)  
°
Peak Forward Surge Current,  
Single half sine wave Superimposed  
on rated load (JEDEC Method)  
IFSM  
I2t  
200  
64  
Amps.  
A2S  
Current Squared Time at t < 8.3 ms.  
Maximum Forward Voltage per Diode at IF =3 A.  
VF  
1.0  
10  
Volts  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Ta = 25 C  
IR  
A
m
°
Ta = 100 C  
IR(H)  
200  
8.0  
A
m
°
Typical Thermal Resistance (Note 1)  
Operating Junction Temperature Range  
Storage Temperature Range  
R JC  
q
C/W  
°
TJ  
- 40 to + 150  
- 40 to + 150  
C
C
°
°
TSTG  
Notes :  
1. Thermal Resistance from junction to case w ith units mounted on a 2.6" x 1.4" x 0.06" THK  
(6.5cm.x 3.5cm.x 0.15cm.) Al. Plate. Heatsink.  
UPDATE : APRIL 23, 1998  

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