BR610

更新时间： 2024-09-24 06:44:19

品牌	Logo	应用领域
虹扬 - HY		整流二极管桥式整流二极管
页数	文件大小	规格书
2页	93K
描述
SILICON BRIDGE RECTIFIERS

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中文翻译

获取价格

技术参数
数据手册

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BR610 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.71	Is Samacsys：	N
二极管类型：	BRIDGE RECTIFIER DIODE	Base Number Matches：	1

BR610 数据手册

BR6005 thru BR610

REVERSE VOLTAGE

- 50 to 1000Volts

- 6.0 Amperes

SILICON BRIDGE RECTIFIERS

FORWARD CURRENT

BR6

FEATURES

● Surge overload rating -175 amperes peak

.276(7.0)

.236(6.0)

● Low forward voltage drop

● Small size; simple installation

● Sliver plated copper leads

.750

(19.0)

MIN

● Mounting position: Any

.042(1.07)

DIA.

.038(0.97)

HOLE FOR

NO.6 SCREW

.620(15.7)

.580(14.7)

.445(11.3)

.405(10.3)

.620(15.7)

.580(14.7)

.445(11.3)

.405(10.3)

Polarity shown on side of case, Positive lead by beveled corner.

Dimensions in inches and (milimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

SYMBOL BR6005 BR601

BR602

BR604

400

BR606

600

BR608

800

BR610

1000

700

UNIT

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

VRRM

VRMS

100

200

140

Maximum RMS Bridge Input Voltage

Maximum Average Forward

280

420

560

I(AV)

6.0

175

1.0

Rectified Output Current at

Peak Forward Surge Current

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load

Maximum Forward Voltage Drop

TA=50℃

IFSM

Per Bridge Element at 3.0A Peak

10.0

1.0

Maximum Reverse Current at Rated TJ=25℃

μA

DC Blocking Voltage Per Element

Operating Temperature Range

TJ=100℃

-55 to +125

-55 to +150

℃

Storage Temperature Range

TSTG

~ 316 ~

中文翻译

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