Datasheet > BR3F

BR3F

更新时间： 2024-10-29 07:08:15

品牌	Logo	应用领域
HVGT		二极管高压
页数	文件大小	规格书
1页	67K
描述
3.0kV 1.0A HIGH VOLTAGE DIODES

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中文翻译

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数据手册

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BR3F 数据手册

HVCA

BR3F

3.0kV 1.0A HIGH VOLTAGE DIODES

Outline Drawings : mm

is high reliability resin molded type high voltage

BR3F

diode in small size package which is sealed a multilayed

Cathode Mark

o 5.0

Lot No.

mesa type silicon chip by epoxy resin.

o 1.28

Features

High speed switching

High Current

27 min.

9.0

27 min.

High surge resisitivity for CRT discharge

High reliability design

High Voltage

Cathode Mark

Applications

X light Power supply

Laser

Type

Mark

Voltage doubler circuit

Microwave emission power

BR3F

Maximum Ratings and Characteristics

Absolute Maximum Ratings

Symbols

V_RRM

I_O

Items

Condition

BR3F

3.0

Units

Repetitive Peak Renerse Voltage

Average Output Current

Suege Current

peak

1.0

Ta=25°C,Resistive Load

I_FSM

peak

155

Junction Temperature

°C

125

Allowable Operation Case Temperature

Storage Temperature

T^stg

-40 to +155

Electrical Characteristics (Ta=25°C Unless otherwise specified )

Items

Symbols

V^F

BR3F

9.0

Conditions

Units

Maximum Forward Voltage Drop

Maximum Reverse Current

at 25°C,I_{F =IF(AV)}

at 25°C,V^R=VRRM

IR1

5.0

IR2

at 100°C,V

RRM

Maximum Reverse Recovery Time

Junction Capacitance

Trr

at 25°C

150

at 25°C,VR=0V,f=1MHz

GETE ELECTRONICS CO.,LTD

Http://www.getedz.com E-mail:sales@getedz.com

2012

中文翻译

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