Datasheet > 存储 > EEPROM> BR34E02-W

BR34E02-W

更新时间： 2024-09-25 03:22:31

品牌	Logo	应用领域
罗姆 - ROHM		光电二极管双倍数据速率
页数	文件大小	规格书
20页	1184K
描述
DDR/DDR2 (For memory module) SPD Memory

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中文翻译

获取价格

数据手册

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BR34E02-W 数据手册

TECHNICAL NOTE

Double-cell Memory for Plug & Play

DDR/DDR2

(For memory module) SPD Memory

BR34E02-W

●Description

BR34E02FVT-W is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect)

●Features

・256×8 bit architecture serial EEPROM

・Wide operating voltage range: 1.7V-3.6V

・Two-wire serial interface

・High reliability connection using Au pads and Au wires

・Self-Timed Erase and Write Cycle

・Page Write Function (16byte)

・Write Protect Mode

Settable Reversible Write Protect Function: 00h-7Fh

Write Protect 1 (Onetime Rom)

Write Protect 2 (Hardwire WP PIN)

・Low Power consumption

: 00h-7Fh

: 00h-FFh

Write

Read

(at 1.7V )

0.4mA (typ.)

0.1mA(typ.)

0.1μA(typ.)

Standby ( at 1.7V )

・DATA security

Write protect feature (WP pin)

Inhibit to WRITE at low VCC

・Compact package: TSSOP-B8, VSON008X2030

・High reliability fine pattern CMOS technology

・Rewriting possible up to 1,000,000 times

・Data retention: 40 years

・Noise reduction Filtered inputs in SCL / SDA

・Initial data FFh at all addresses

●BR34E02-W Series

Capacity Bit format

2Kbit 256X8

Type

BR34E02-W

Power Source Voltage TSSOP-B8 VSON008X2030

1.7V～3.6V

●

Ver.A Aug.2007

12 3 4 5 6 7...20

中文翻译

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