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BR25128GUZ-WE2 PDF预览

BR25128GUZ-WE2

更新时间: 2024-11-26 20:57:39
品牌 Logo 应用领域
罗姆 - ROHM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟内存集成电路
页数 文件大小 规格书
17页 489K
描述
EEPROM, 16KX8, Serial, CMOS, PBGA12, ROHS COMPLIANT, WLCSP-12

BR25128GUZ-WE2 技术参数

生命周期:Active零件包装代码:BGA
包装说明:ROHS COMPLIANT, WLCSP-12针数:12
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.8
最大时钟频率 (fCLK):10 MHzJESD-30 代码:R-PBGA-B12
长度:2.63 mm内存密度:131072 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:12
字数:16384 words字数代码:16000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16KX8
封装主体材料:PLASTIC/EPOXY封装代码:VFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行:SERIAL认证状态:Not Qualified
座面最大高度:0.4 mm串行总线类型:SPI
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.7 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:BALL
端子位置:BOTTOM宽度:2 mm
Base Number Matches:1

BR25128GUZ-WE2 数据手册

 浏览型号BR25128GUZ-WE2的Datasheet PDF文件第2页浏览型号BR25128GUZ-WE2的Datasheet PDF文件第3页浏览型号BR25128GUZ-WE2的Datasheet PDF文件第4页浏览型号BR25128GUZ-WE2的Datasheet PDF文件第5页浏览型号BR25128GUZ-WE2的Datasheet PDF文件第6页浏览型号BR25128GUZ-WE2的Datasheet PDF文件第7页 
High Reliability Series Serial EEPROM Series  
WL-CSP EEPROMs family  
SPI BUS  
BR25S128GUZ-W  
No.10001JAT06  
Description  
BR25S128GUZ-W is a 16K×8bit serial EEPROM of SPI BUS interface method.  
Features  
1) High speed clock action up to 10MHz (Max.)  
2) Wait function by HOLDB terminal  
3) Part or whole of memory arrays settable as read only memory area by program  
4) 1.75.5V single power source action most suitable for battery use  
5) 64Byte page write mode useful for initial value write at factory shipment  
6) For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1)  
7) Auto erase and auto end function at data rewrite  
8) Low current consumption  
At write action (5.0V)  
At read action (5.0V)  
At standby action (5.0V)  
:
:
1.5mA (Typ.)  
1.0mA (Typ.)  
0.1μA (Typ.)  
:
9) Address auto increment function at read action  
10) Write mistake prevention function  
Write prohibition at power on  
Write prohibition by command code (WRDI)  
Write prohibition by WPB pin  
Write prohibition block setting by status registers (BP1, BP0)  
Write mistake prevention function at low voltage  
11) VCSP35L2 Package  
12) Data at shipment Memory array: FFh, status register WPEN, BP1, BP0 : 0  
13) Data kept for 40 years  
14) Data rewrite up to 1,000,000 times  
www.rohm.com  
© 2010 ROHM Co., Ltd. All rights reserved.  
2010.01 - Rev.A  
1/16  

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