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BR24L256FVJ-WE2 PDF预览

BR24L256FVJ-WE2

更新时间: 2024-11-26 06:44:15
品牌 Logo 应用领域
罗姆 - ROHM 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
41页 767K
描述
High Reliability Series EEPROMs I2C BUS

BR24L256FVJ-WE2 技术参数

生命周期:Active零件包装代码:SOIC
包装说明:ROHS COMPLIANT, TSSOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.76
Is Samacsys:N最大时钟频率 (fCLK):0.4 MHz
JESD-30 代码:S-PDSO-G8长度:3 mm
内存密度:262144 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:32768 words
字数代码:32000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:SQUARE
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
认证状态:Not Qualified座面最大高度:1.1 mm
串行总线类型:I2C最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
宽度:3 mm最长写入周期时间 (tWC):5 ms
Base Number Matches:1

BR24L256FVJ-WE2 数据手册

 浏览型号BR24L256FVJ-WE2的Datasheet PDF文件第2页浏览型号BR24L256FVJ-WE2的Datasheet PDF文件第3页浏览型号BR24L256FVJ-WE2的Datasheet PDF文件第4页浏览型号BR24L256FVJ-WE2的Datasheet PDF文件第5页浏览型号BR24L256FVJ-WE2的Datasheet PDF文件第6页浏览型号BR24L256FVJ-WE2的Datasheet PDF文件第7页 
Serial EEPROM Series  
High Reliability Series  
EEPROMs I2C BUS  
No.09001EDT04  
BR24L□□-W Series,BR24S□□□-W Series  
ROHM's series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides  
a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold  
wires are used for internal connections, pushing the boundaries of reliability to the limit.  
BR24L□□-W Series assort 1Kbit64Kbit. BR24S□□□-W Series are possible to operate at high speed in low voltage  
and assort 8Kbit256Kbit.  
Contents  
BR24L□□-W Series  
BR24L01A-W, BR24L02-W, BR24L04-W, BR24L08-W,  
BR24L16-W, BR24L32-W, BR24L64-W  
・・・・P2  
BR24S□□□-W Series  
BR24S08-W, BR24S16-W, BR24S32-W, BR24S64-W,  
BR24S128-W, BR24S256-W  
・・・P20  
www.rohm.com  
2009.09 - Rev.D  
1/40  
© 2009 ROHM Co., Ltd. All rights reserved.  

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