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BR24L256FJ-WE2 PDF预览

BR24L256FJ-WE2

更新时间: 2024-11-26 06:44:15
品牌 Logo 应用领域
罗姆 - ROHM 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
41页 767K
描述
High Reliability Series EEPROMs I2C BUS

BR24L256FJ-WE2 技术参数

生命周期:Active零件包装代码:SOIC
包装说明:ROHS COMPLIANT, SOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.76
最大时钟频率 (fCLK):0.4 MHzJESD-30 代码:R-PDSO-J8
长度:4.9 mm内存密度:262144 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:32768 words字数代码:32000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL认证状态:Not Qualified
座面最大高度:1.775 mm串行总线类型:I2C
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL宽度:3.9 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

BR24L256FJ-WE2 数据手册

 浏览型号BR24L256FJ-WE2的Datasheet PDF文件第2页浏览型号BR24L256FJ-WE2的Datasheet PDF文件第3页浏览型号BR24L256FJ-WE2的Datasheet PDF文件第4页浏览型号BR24L256FJ-WE2的Datasheet PDF文件第5页浏览型号BR24L256FJ-WE2的Datasheet PDF文件第6页浏览型号BR24L256FJ-WE2的Datasheet PDF文件第7页 
Serial EEPROM Series  
High Reliability Series  
EEPROMs I2C BUS  
No.09001EDT04  
BR24L□□-W Series,BR24S□□□-W Series  
ROHM's series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides  
a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold  
wires are used for internal connections, pushing the boundaries of reliability to the limit.  
BR24L□□-W Series assort 1Kbit64Kbit. BR24S□□□-W Series are possible to operate at high speed in low voltage  
and assort 8Kbit256Kbit.  
Contents  
BR24L□□-W Series  
BR24L01A-W, BR24L02-W, BR24L04-W, BR24L08-W,  
BR24L16-W, BR24L32-W, BR24L64-W  
・・・・P2  
BR24S□□□-W Series  
BR24S08-W, BR24S16-W, BR24S32-W, BR24S64-W,  
BR24S128-W, BR24S256-W  
・・・P20  
www.rohm.com  
2009.09 - Rev.D  
1/40  
© 2009 ROHM Co., Ltd. All rights reserved.  

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