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BR24L04FVT-W PDF预览

BR24L04FVT-W

更新时间: 2024-09-19 11:07:43
品牌 Logo 应用领域
罗姆 - ROHM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
26页 390K
描述
推荐罗姆新产品采用BR24G04FVT-3。

BR24L04FVT-W 数据手册

 浏览型号BR24L04FVT-W的Datasheet PDF文件第2页浏览型号BR24L04FVT-W的Datasheet PDF文件第3页浏览型号BR24L04FVT-W的Datasheet PDF文件第4页浏览型号BR24L04FVT-W的Datasheet PDF文件第5页浏览型号BR24L04FVT-W的Datasheet PDF文件第6页浏览型号BR24L04FVT-W的Datasheet PDF文件第7页 
BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /  
BR24L01AFV-W / BR24L01AFVM-W  
Memory ICs  
128×8 bit electrically erasable PROM  
BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W  
BR24L01AFV-W / BR24L01AFVM-W  
The BR24L01A-W series is 2-wire (I2C BUS type) serial EEPROMs which are electrically programmable.  
I2C BUS is a registered trademark of Philips.  
zApplications  
General purpose  
zFeatures  
1) 128 registers × 8 bits serial architecture.  
2) Single power supply (1.8V to 5.5V).  
3) Two wire serial interface.  
4) Self-timed write cycle with automatic erase.  
5) 8 byte page write mode.  
6) Low power consumption.  
Write (5V) : 1.2mA (Typ.)  
Read (5V) : 0.2mA (Typ.)  
Standby (5V) : 0.1µA (Typ.)  
7) DATA security  
Write protect feature (WP pin) .  
Inhibit to WRITE at low VCC.  
8) Small package - - - DIP8 / SOP8 / SOP-J8 / SSOP-B8 / MSOP-8  
9) High reliability EEPROM with Double-Cell Structure  
10) High reliability fine pattern CMOS technology.  
11) Endurance : 1,000,000 erase / write cycles  
12) Data retention : 40 years  
13) Filtered inputs in SCLSDA for noise suppression.  
14) Initial data FFh in all address.  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Supply voltage  
Symbol  
Limits  
Unit  
V
VCC  
0.3 to +6.5  
800 (DIP8)  
450 (SOP8)  
1
2
Power dissipation  
Pd  
mW  
450 (SOP-J8)  
3
4
5
300 (SSOP-B8)  
310 (MSOP8)  
65 to +125  
Storage temperature  
Operating temperature  
Terminal voltage  
Tstg  
Topr  
°C  
°C  
V
40 to +85  
0.3 to VCC+0.3  
1
Degradation is done at 8.0mW/°C for operation above 25°C.  
2, 3 Degradation is done at 4.5mW/°C for operation above 25°C.  
4
5
Degradation is done at 3.0mW/°C for operation above 25°C.  
Degradation is done at 3.1mW/°C for operation above 25°C.  
1/25  

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