Datasheet > BR103

BR103

更新时间： 2025-07-19 18:25:23

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描述
Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 30; Peak Repetitive

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BR103 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

BR103 数据手册

BR103

SILICON PLANAR THYRISTOR

High-reliability discrete products

and engineering services since 1977

FEATURES



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Rating

Symbol

V_RR/V_DR

I_T(RMS)

I_TSM

Value

Unit

Negative and positive repetitive peak off state voltage

Maximum RMS on-state current

0.8

Surge on state current, sinusoidal pulse (t_p< 10ms)

Repetitive surge on-state current at t_p= 6µs and f = 40kHz sine

Peak gate forward current

I_T

I_GFP

0.5

Repetitive reverse gate voltage

V_(KG)R

T_stg,T_J

P_G(AV)

P_GP

Storage and junction temperature range

Average gate power dissipation

-40 to +125

0.01

°C

Peak gate power dissipation

0.1

ELECTRICAL CHARACTERISTICS (T_C= 25°C)

Characteristic

Symbol

Value

Unit

STATIC CHARACTERISTICS

Continuous reverse blocking and off state current

(R_GK= 1kΩ)

(T_J= 125°C)

I_R/I_D

µA

<50

Holding current

Ω)

(R_GK= 1k

I_H

(T_J= -40°C)

On-state voltage

V_T

<1.5

(I_TS= 1A, t_p= 1ms)

Gate trigger current

Ω)

(V_AK= 6V, R_L= 100

I_GT

<200

<250

µA

(T_J= 0°C)

Gate trigger voltage

V_GT

V_GF

dv/dt

t_q

Ω, R

(V_AK= 6V, R_L= 100

Ω, T

_GT= 1k

_J= 0°C)

<0.9

>0.1

Gate non-trigger forward voltage

Ω, T

(V_D= V_DR, R_GK= 1k

Critical rate of voltage rise

Ω, T

_J= 125°C)

V/µs

µs

(R_GK= 1k

_J= 125°C, V_AK= 10V)

Turn-off time

(I_{TS(rectangular)}= 1A, t_p= 50µs)

Turn-on time

t_on

µs

Ω, R

(V_D= V_DR, R_L= 100

Ω, I

_GK= 1k _GTS= 1.4mA, t_p= 5µs, t_r= 40ns)

1.2

Rev. 20130118

12 3 4

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