Datasheet > BR100LLD

BR100LLD

更新时间： 2024-09-26 06:44:15

品牌	Logo	应用领域
恩智浦 - NXP		触发装置
页数	文件大小	规格书
3页	19K
描述
Silicon Bi-directional Trigger Device

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BR100LLD 数据手册

Philips Semiconductors

Product Specification

Silicon Bi-directional Trigger Device

BR100/03 LLD

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Silicon bidirectional trigger device in a

glass envelope suitable for surface

mounting. The device is intended for

use in triac and thyristor trigger

circuits.

SYMBOL PARAMETER

MIN. MAX. UNIT

V_(BO)

V_O

Breakover voltage

Output voltage

I_FRM

Repetitive peak forward current

OUTLINE - SOD80

SYMBOL

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

I_FRM

Repetitive peak forward

current

Total power dissipation

Storage temperature

Operating junction

temperature

t ≤ 10 µs, T_tp≤ 50˚C; f = 60 Hz

P_tot

T_stg

T_j

T_tp= 50˚C

-55

150

125

100

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

330 K/W

R_{th j-tp}

Thermal resistance junction to PCB mounted

tie point

CHARACTERISTICS

T_a= 25 ˚C unless otherwise stated.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_(BO)

Breakover voltage

I = I_(BO)

3.5

|V_(BO)+| - |V_(BO)-

Breakover voltage symmetry I = I_(BO), see fig: 1

V_O

I_(BO)

dV_(BO)/dT

Output voltage

Breakover current

Temperature coefficient of

V_(BO)

R_L= 20 Ω; Circuit of fig: 2

V = V_(BO)

µA

%/K

0.1

t_r

Risetime

I_p= 0.5 A; Circuit of fig: 2

1.5

µs

February 1996

Rev 1.000

12 3

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