BR1001S

更新时间： 2024-02-24 17:23:55

品牌	Logo	应用领域
EIC		/
页数	文件大小	规格书
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描述
SILICON BRIDGE RECTIFIERS

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技术参数
数据手册

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BR1001S 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.62
二极管类型：	BRIDGE RECTIFIER DIODE	Base Number Matches：	1

BR1001S 数据手册

SILICON BRIDGE RECTIFIERS

BR10

BR1001S

PRV : 100 Volts

Io : 6.0 Ampere

0.520 (13.20)

0.480 (12.20)

FEATURES :

0.158 (4.00)

0.142 (3.60)

* High case dielectric strength

* High surge current capability

* High reliability

0.77 (19.56)

0.73 (18.54)

0.290 (7.36)

0.210 (5.33)

* Low reverse current

* Low forward voltage drop

* ldeal for printed circuit board

* Pb / RoHS Free

0.052 (1.32)

0.048 (1.22)

0.75 (19.1)

Min.

0.30 (7.62)

0.25 (6.35)

MECHANICAL DATA :

Dimensions in inches and ( millimeters )

* Case : Reliable low cost construction

utilizing molded plastic tecnique

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per

MIL - STD 202 , Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Any

* Weight : 6.1 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 50 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

SYMBOL

VALUE

UNIT

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

100

Maximum Reverse Voltage

100

6.0

IF(AV)

Maximum Average Forward Rectified Current Ta=40°C

Maximum Peak Forward Surge Current Single half sine wave

Superimposed on rated load (JEDEC Method)

Maximum Forward Voltage drob per diode at IF = 9.0 A

Maximum Repetitive Peak Reverse Current

Typical Thermal Resistance at Junction to Ambient ( Note 1 )

Operating Junction Temperature Range

IFSM

200

1.0

IRRM

1.8

°C/W

°C

RqJA

-40 to + 150

Storage Temperature Range

Tstg

°C

Notes :

1 ) Thermal resistance from Junction to ambient with units mounted on a 100cm²x 1.5 t Al. plate.

Page 1 of 2

Rev. 02 : March 25, 2005

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