BQ4011YMA-200

更新时间： 2024-11-30 22:09:23

品牌	Logo	应用领域
德州仪器 - TI		内存集成电路静态存储器光电二极管
页数	文件大小	规格书
11页	728K
描述
32Kx8 Nonvolatile SRAM

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中文翻译

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数据手册

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BQ4011YMA-200 数据手册

bq4011/bq4011Y

32Kx8 Nonvolatile SRAM

At t his tim e t he integr a l ener gy

Features

➤ Data retention in the absence of

General Description

source is switched on to sustain the

memory until after V_CCreturns valid.

The CMOS bq4011 is a nonvolatile

262,144-bit static RAM organized as

32,768 words by 8 bits. The integral

control circuitry and lithium energy

source provide reliable nonvolatility

coupled with th e unlim ited write

cycles of standard SRAM.

power

The bq4011 uses an extremely low

s t a n dby cu r r en t CMOS SRAM,

coupled with a small lithium coin cell

to provide nonvolatility without long

write-cycle times and the write-cycle

limitations associated with EEPROM.

➤ Automatic write-protection

during power-up/power-down

cycles

➤ Industry-standard 28-pin 32K x

8 pinout

Th e con tr ol cir cu it r y con s ta n t ly

monitors the single 5V supply for an

ou t -of-t oler a n ce con dit ion . Wh en

V_CCfalls out of tolerance, the SRAM

is unconditionally write-protected to

prevent inadvertent write operation.

The bq4011 requires no external cir-

cuitry and is socket-compatible with

industry-standard SRAMs and most

EPROMs and EEPROMs.

➤ Conventional SRAM operation;

unlimited write cycles

➤ 10-year minimum data retention

in absence of power

➤ Battery internally isolated until

power is applied

Pin Connections

Pin Names

Block Diagram

A₀–A₁₄

Address inputs

DQ₀–DQ₇Data input/output

Chip enable input

Output enable input

Write enable input

+5 volt supply input

Ground

V_CC

V_SS

Selection Guide

Maximum

Access

Negative

Supply

Maximum

Access

Negative

Supply

Part

Number

Time (ns)

Tolerance

Number

Time (ns)

Tolerance

bq4011Y-70

-10%

bq4011 -100

bq4011Y -100

bq4011Y -150

bq4011Y -200

100

150

200

-5%

100

150

200

bq4011 -150

bq4011 -200

Aug. 1993 C

12 3 4 5 6 7...11

中文翻译

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