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BQ4010_07

更新时间： 2024-11-30 03:22:27
品牌 Logo 应用领域
德州仪器 - TI 静态存储器
页数 文件大小 规格书
18页 178K
描述
8 k x 8 NONVOLATILE SRAM (5 V, 3.3 V)

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BQ4010_07 数据手册

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bq4010/Y/LY  
www.ti.com  
SLUS116A–MAY 1999–REVISED APRIL 2007  
8 k × 8 NONVOLATILE SRAM (5 V, 3.3 V)  
FEATURES  
GENERAL DESCRIPTION  
•
•
•
•
Data Retention for at least 10 Years Without  
Power  
The CMOS bq4010/Y/LY is a nonvolatile 65,536-bit  
static RAM organized as 8,192 words by 8 bits. The  
integral control circuitry and lithium energy source  
provide reliable nonvolatility coupled with the  
unlimited write cycles of standard SRAM.  
Automatic Write-Protection During  
Power-up/Power-down Cycles  
Conventional SRAM Operation, Including  
Unlimited Write Cycles  
The control circuitry constantly monitors the single  
supply for an out-of-tolerance condition. When VCC  
falls out of tolerance, the SRAM is unconditionally  
write-protected to prevent an inadvertent write  
operation.  
Internal Isolation of Battery before Power  
Application  
•
•
5-V or 3.3-V Operation  
Industry Standard 28-Pin DIP Pinout or  
34-Pin LIFETIME LITHIUM™ SMD Pinout  
At this time the integral energy source is switched on  
to sustain the memory until after VCC returns valid.  
•
Snap-on, Replaceable Lithium Battery  
for SMD Device  
(Device Number: bq401BATCAP)  
The bq4010/Y/LY uses extremely low standby  
current CMOS SRAMs, coupled with small lithium  
coin cells to provide nonvolatility without long  
write-cycle times and the write-cycle limitations  
associated with EEPROM.  
The bq4010/Y/LY requires no external circuitry and is  
compatible with the industry-standard 64-Mb SRAM  
pinout.  
PIN CONNECTIONS  
34−Pin  
Lifetime Lithium Module  
(TOP VIEW)  
28−Pin DIP Module  
(TOP VIEW)  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
NC/BW  
NC  
NC  
NC  
NC  
NC  
1
NC  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
V
CC  
2
A
12  
2
WE  
NC  
NC  
3
A
7
3
NC/RST  
4
A
6
4
A
8
V
CC  
A
12  
5
A
5
5
A
9
WE  
OE  
CE  
A
11  
6
A
4
A
10  
7
6
A
11  
A
9
8
A
3
7
OE  
DQ  
7
A
8
9
A
2
8
A
10  
DQ  
6
A
7
10  
11  
12  
13  
14  
15  
16  
17  
A
1
9
CE  
DQ  
DQ  
5
A
6
A
0
10  
11  
12  
13  
14  
7
DQ  
4
A
5
DQ  
DQ  
DQ  
DQ  
DQ  
0
6
5
4
3
DQ  
3
A
4
DQ  
1
DQ  
2
A
3
DQ  
2
DQ  
1
A
2
V
SS  
DQ  
0
A
1
V
SS  
A
0
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 1999–2007, Texas Instruments Incorporated  
1234567...18

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