Datasheet > BQ4010-150

BQ4010-150

更新时间： 2024-11-30 03:22:27

品牌	Logo	应用领域
德州仪器 - TI		静态存储器
页数	文件大小	规格书
14页	758K
描述
8Kx8 Nonvolatile SRAM

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中文翻译

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数据手册

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BQ4010-150 数据手册

bq4010/bq4010Y

8Kx8 Nonvolatile SRAM

At t his tim e th e int egr a l ener gy

Features

➤ Data retention in the absence of

General Description

source is switched on to sustain the

memory until after V_CCreturns valid.

The CMOS bq4010 is a nonvolatile

65,536-bit static RAM organized as

8,192 words by 8 bits. The integral

control circuitry and lithium energy

source provide reliable nonvolatility

coupled with th e u nlim ited wr ite

cycles of standard SRAM.

power

The bq4010 uses an extremely low

s t a n d by cu r r en t CMOS SR AM,

coupled with a small lithium coin

cell to provide nonvolatility without

long write-cycle times and the write-

cycle lim it a tion s a ssocia ted with

EEPROM.

➤ Automatic write-protection

during power-up/power-down

cycles

➤ Industry-standard 28-pin 8K x 8

pinout

Th e con t r ol cir cu it r y con st a n t ly

monitors the single 5V supply for an

out-of-tolerance condition. When V_CC

falls out of tolerance, the SRAM is

un conditionally wr ite-protected to

prevent inadvertent write operation.

➤ Conventional SRAM operation;

The bq4010 requires no external cir-

cuitry and is socket-compatible with

industry-standard SRAMs and most

EPROMs and EEPROMs.

unlimited write cycles

➤ 10-year minimum data retention

in absence of power

➤ Battery internally isolated until

power is applied

Pin Connections

Pin Names

Block Diagram

A₀–A₁₂

Address inputs

DQ₀–DQ₇Data input/output

Chip enable input

Output enable input

Write enable input

No connect

V_CC

V_SS

+5 volt supply input

Ground

Selection Guide

Maximum

Access

Negative

Supply

Maximum

Access

Negative

Supply

Part

Number

Time (ns)

Tolerance

Number

Time (ns)

Tolerance

bq4010Y -70

bq4010Y -85

bq4010Y -150

bq4010Y -200

-10%

bq4010 -85

-5%

bq4010 -150

bq4010 -200

150

200

150

200

Sept. 1996 D

12 3 4 5 6 7...14

中文翻译

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