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BQ2018SN-E1TRG4 PDF预览

BQ2018SN-E1TRG4

更新时间: 2024-10-28 12:34:07
品牌 Logo 应用领域
德州仪器 - TI 电源电路电源管理电路光电二极管
页数 文件大小 规格书
25页 712K
描述
Power Minder IC

BQ2018SN-E1TRG4 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:GREEN, SOIC-8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.68
Is Samacsys:N可调阈值:NO
模拟集成电路 - 其他类型:POWER SUPPLY SUPPORT CIRCUITJESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:4.89 mm
湿度敏感等级:1信道数量:1
功能数量:1端子数量:8
最高工作温度:70 °C最低工作温度:-20 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
电源:3/5 V认证状态:Not Qualified
座面最大高度:1.78 mm子类别:Power Management Circuits
最大供电电流 (Isup):0.08 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.8 V标称供电电压 (Vsup):4.25 V
表面贴装:YES温度等级:COMMERCIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.935 mm
Base Number Matches:1

BQ2018SN-E1TRG4 数据手册

 浏览型号BQ2018SN-E1TRG4的Datasheet PDF文件第2页浏览型号BQ2018SN-E1TRG4的Datasheet PDF文件第3页浏览型号BQ2018SN-E1TRG4的Datasheet PDF文件第4页浏览型号BQ2018SN-E1TRG4的Datasheet PDF文件第5页浏览型号BQ2018SN-E1TRG4的Datasheet PDF文件第6页浏览型号BQ2018SN-E1TRG4的Datasheet PDF文件第7页 
bq2018  
Power Minder™ IC  
The bq2018 also features 128 bytes  
of NVRAM registers. The upper 13  
bytes of NVRAM contain the capac-  
Features  
General Description  
Multifunction charge/discharge The bq2018 is a low-cost charge/dis-  
ity monitoring and status informa-  
tion. The RBI input operates from  
an external power storage source  
such as a capacitor or a series cell in  
the battery pack, providing register  
nonvolatility for periods when the  
battery is shorted to ground or when  
the battery charge state is not suffi-  
cient to operate the bq2018. During  
this mode, the register backup cur-  
rent is less than 100nA.  
counter  
charge counter peripheral packaged in  
an 8-pin TSSOP or SOIC. It works  
with an intelligent host controller, pro-  
viding state-of-charge information for  
rechargeable batteries.  
Resolves signals less than 12.5µV  
Internal offset calibration im-  
proves accuracy  
The bq2018 measures the voltage  
drop across a low-value series sense  
resistor between the negative termi-  
nal of the battery and the battery  
pack ground contact. By using the ac-  
cumulated counts in the charge,  
discharge, and self-discharge regis-  
ters, an intelligent host controller can  
determine battery state-of-charge in-  
formation. To improve accuracy, an  
offset count register is available. The  
system host controller is responsible  
for the register maintenance by reset-  
ting the charge in/out and self-  
discharge registers as needed.  
1024 bits of NVRAM configured as  
128 x 8  
Internal temperature sensor for  
self-discharge estimation  
Packaged in an 8-pin TSSOP or  
SOIC, the bq2018 is small enough  
to fit in the crevice between two A-  
size cells or within the width of a  
prismatic cell.  
Single-wire serial interface  
Dual operating modes:  
- Operating: <80µA  
- Sleep: <10µA  
REG output for low-cost mi-  
croregulation  
Internal timebase eliminates ex-  
ternal components  
8-pin TSSOP or SOIC allows bat-  
tery pack integration  
Pin Connections  
Pin Names  
REG  
VCC  
Regulator output  
Supply voltage input  
Ground  
WAKE  
SR1  
Wake-up output  
Current sense input 1  
Current sense input 2  
Register backup input  
VSS  
SR2  
REG  
1
2
3
4
8
7
6
5
WAKE  
SR1  
SR2  
RBI  
HDQ  
Data input/output  
RBI  
V
CC  
V
SS  
HDQ  
8-Pin TSSOP or Narrow SOIC  
PN-201801.eps  
SLUS003–JUNE 1999 C  
1

BQ2018SN-E1TRG4 替代型号

型号 品牌 替代类型 描述 数据表
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