BPW96A

更新时间： 2024-11-05 22:26:07

品牌	Logo	应用领域
威世 - VISHAY		晶体光电晶体管光电晶体管
页数	文件大小	规格书
6页	88K
描述
Silicon NPN Phototransistor

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中文翻译

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技术参数
数据手册

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BPW96A 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.82	Is Samacsys：	N
最大暗电源：	200 nA	安装特点：	THROUGH HOLE MOUNT
最大通态电流：	0.1 A	最高工作温度：	100 °C
最低工作温度：	-20 °C	峰值波长：	830 nm
最大功率耗散：	0.1 W	最长响应时间：	0.000004 s
子类别：	Photo Transistors	表面贴装：	NO
Base Number Matches：	1

BPW96A 数据手册

BPW96

Vishay Telefunken

Silicon NPN Phototransistor

Description

BPW96 is a high speed and high sensitive silicon NPN

epitaxial planar phototransistor in a standard T–1

(ø 5 mm) package. Due to its waterclear epoxy the de-

vice is sensitive to visible and near infrared radiation.

The viewing angle of ± 20 makes it insensible to ambi-

ent straylight.

Features

Fast response times

High photo sensitivity

Standard T–1 (ø 5 mm) clear plastic package

Angle of half sensitivity ϕ = ± 20

Suitable for visible and near infrared radiation

Selected into sensitivity groups

94 8391

Applications

Detector in electronic control and drive circuits

Absolute Maximum Ratings

amb

= 25 C

Parameter

Test Conditions

Symbol

Value

100

Unit

Collector Emitter Voltage

Emitter Collector Voltage

Collector Current

Peak Collector Current

Total Power Dissipation

Junction Temperature

CEO

ECO

t /T = 0.5, t

10 ms

amb

47 C

tot

150

100

Storage Temperature Range

Soldering Temperature

Thermal Resistance Junction/Ambient

–55...+100

260

K/W

stg

3 s

thJA

350

Document Number 81532

Rev. 3, 16-Nov-99

www.vishay.de • FaxBack +1-408-970-5600

1 (6)

12 3 4 5 6

中文翻译

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