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C650 PDF预览

C650

更新时间: 2024-02-16 07:42:18
品牌 Logo 应用领域
伯恩斯 - BOURNS 装置
页数 文件大小 规格书
6页 643K
描述
Transient Blocking Units - TBU? Devices

C650 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.73模拟集成电路 - 其他类型:AC-DC REGULATED POWER SUPPLY MODULE
标称输入电压:100 VJESD-30 代码:R-XXMA-X
功能数量:1输出次数:1
最高工作温度:50 °C最低工作温度:-20 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY表面贴装:NO
技术:HYBRID温度等级:OTHER
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
最大总功率输出:650 W微调/可调输出:NO
Base Number Matches:1

C650 数据手册

 浏览型号C650的Datasheet PDF文件第2页浏览型号C650的Datasheet PDF文件第3页浏览型号C650的Datasheet PDF文件第4页浏览型号C650的Datasheet PDF文件第5页浏览型号C650的Datasheet PDF文件第6页 
Features  
Applications  
Formerly  
brand  
Combo voice / xDSL linecards  
Voice linecards  
Extremely high speed performance  
Blocks high voltages and currents  
Very high bandwidth; GHz compatible  
Small package, minimal PCB area  
Simple, superior circuit protection  
RoHS compliant*, UL Recognized  
MDF, primary protection modules  
Process control equipment  
Test and measurement equipment  
General electronics  
TBUC650 and C850 Protectors  
Transient Blocking Units - TBUDevices  
Agency Approval  
Bourns® C650 and C850 series products are high speed  
bidirectional protection components, constructed using  
MOSFET semiconductor technology, designed to protect  
against faults caused by short circuits, AC power cross,  
induction and lightning surges.  
UL recognized component File # E315805.  
Industry Standards  
Description  
Model  
The TBU™ high speed protector, triggering as a function of  
the MOSFET, blocks surges and provides an effective barrier  
behind which sensitive electronics are not exposed to large  
voltages or currents during surge events. The TBU™ device is  
provided in a surface mount DFN package and meets industry  
standard requirements such as RoHS and Pb Free solder  
reflow profiles.  
C650  
C850  
GR-1089  
Port Type 1, 3, 5  
Telcordia  
ITU-T  
C650  
C850  
GR-974  
K.20, K.20E, K.21, K.21E, K.45  
C850  
Absolute Maximum Ratings (T  
= 25 °C)  
amb  
Symbol  
Parameter  
Maximum protection voltage for impulse faults with rise time 1 µsec  
Value  
Unit  
C650-xxx-WH  
C850-xxx-WH  
650  
850  
V
V
V
V
imp  
C650-xxx-WH  
C850-xxx-WH  
300  
425  
Maximum protection voltage for continuous V  
faults  
rms  
rms  
T
T
Operating temperature range  
Storage temperature range  
-40 to +85  
°C  
°C  
op  
-65 to +150  
stg  
Electrical Characteristics (T  
= 25 °C)  
amb  
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Unit  
Cx50-100-WH  
Cx50-180-WH  
Cx50-260-WH  
100  
180  
260  
Maximum current through the device that will not cause  
current blocking  
I
I
I
mA  
op  
Cx50-100-WH  
Cx50-180-WH  
Cx50-260-WH  
150  
220  
330  
Typical current for the device to go from normal operating  
state to protected state  
mA  
mA  
trigger  
out  
Cx50-100-WH  
Cx50-180-WH  
Cx50-260-WH  
200  
360  
520  
Maximum current through the device  
Series resistance of the TBUdevice  
C650-100-WH  
C650-180-WH  
C650-260-WH  
C850-100-WH  
C850-180-WH  
C850-260-WH  
12  
8
8
17  
11  
11  
14.5  
10  
10  
19  
14  
Ω
R
TBU  
14  
Maximum time for the device to go from normal operating  
state to protected state  
t
1
µs  
mA  
V
block  
Current through the triggered TBUdevice with 50 Vdc circuit  
voltage  
I
1
quiescent  
Voltage below which the triggered TBUdevice will transition to  
normal operating state  
V
14  
reset  
C650 and C850 TBUprotectors are bidirectional; specifications are valid in both directions.  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  

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