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2FAD-C20R PDF预览

2FAD-C20R

更新时间: 2024-02-27 10:05:05
品牌 Logo 应用领域
伯恩斯 - BOURNS 数据线路滤波器过滤器LTE
页数 文件大小 规格书
4页 243K
描述
Integrated Passive & Active Device using CSP

2FAD-C20R 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8504.50.80.00风险等级:5.83
Is Samacsys:N电容:50 µF
最大直流电阻:110 Ω滤波器类型:DATA LINE FILTER
高度:33.78 mmJESD-609代码:e1
长度:102.24 mm安装类型:SURFACE MOUNT
功能数量:6最高工作温度:85 °C
最低工作温度:-40 °C包装方法:TAPE AND REEL
物理尺寸:L102.24XB78.62XH33.78 (mm)/L4.025XB3.095XH1.33 (inch)端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
Base Number Matches:1

2FAD-C20R 数据手册

 浏览型号2FAD-C20R的Datasheet PDF文件第2页浏览型号2FAD-C20R的Datasheet PDF文件第3页浏览型号2FAD-C20R的Datasheet PDF文件第4页 
Features  
Lead free versions available  
RoHS compliant (lead free version)*  
New Product Development  
Integrated Passive Device  
RF Low Pass Filter Performance  
ESD Protection to IEC61000-4-2 Spec.  
2FAD-C20R Series - Integrated Passive & Active Device using CSP  
General Information  
The 2FAD-C2ꢀR devices, manufactured using Thin Film  
On Silicon technology provide ESD protection and EMI  
filtering for the data port of portable electronic devices  
such as cell phones, modems and PDAs. The device  
incorporates six low pass filter channels. Each channel  
has a series 1ꢀꢀ ohm resistor assuring a minimum of  
-3ꢀ dB attenuation from 8ꢀꢀ MHz to 3 GHz. The device  
is suitable for EMI filtering of GSM, CDMA, W-CDMA,  
WLAN and Bluetooth frequencies.  
SOLDER  
BUMPS  
SILICON  
DIE  
Each external port of the six channels includes a back-to-  
back 6.5 Volt Zener diode for ESD protection. Two  
additional standalone 6.5 Volt Zener diodes are available  
for ESD protection on power lines or USB data ports. The  
ESD protection provided by the component enables an  
eight line data port to withstand a minimum 8 ꢁV  
Contact / 15 ꢁV Air Discharge when tested according to  
the ESD method specified in IEC 61ꢀꢀꢀ-4-2. The device  
measures 2.ꢀ4 mm x 2.64 mm and is available in a 2ꢀ pin  
(4 x 5 array) CSP package intended to be mounted  
directly onto an FR4 printed circuit board. The CSP  
device meets typical thermal cycle and bend test  
Figure 1 – CSP Format  
specifications without the use of an underfill material.  
Electrical & Thermal Characteristics  
Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
Zener Diode  
Symbol  
Minimum  
Nominal  
Maximum  
Unit  
Breakdown Voltage @ 1 mA  
Leakage Current @ 3 V  
VBR  
IR  
6
7.2  
8
1
V
uA  
ESD Performance (Note 1 & 2)  
Withstand: Contact Discharge  
Withstand: Air Discharge  
Let Through: Contact Discharge  
Let Through: Air Discharge  
Channel Specification  
8
15  
kV  
kV  
V
15ꢀ  
15ꢀ  
V
Resistance  
Capacitance @ 1 V & 1 MHz  
Filter Attenuation: 8ꢀꢀ MHz – 3ꢀꢀꢀ MHz  
R
C
9ꢀ  
1ꢀꢀ  
5ꢀ  
-4ꢀ  
11ꢀ  
55  
pF  
dB  
-3ꢀ  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Operating Temperature  
Storage Temperature  
Total Power Dissipation @ 7ꢀ °C  
TJ  
Tstg  
PD  
-4ꢀ  
-6ꢀ  
25  
25  
+85  
+125  
1ꢀꢀ  
°C  
°C  
mW  
Note: 1. The IEC 61000-4-2 test method will be adapted for component level testing. The device will provide the specified ESD protection  
performance on the “EXT1 – EXT8” pins only.  
2. “Let Through” is a measure of the component of an incident ESD transient that the protection device allows through to the  
downstream circuitry.  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  

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