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BMT352_16 PDF预览

BMT352_16

更新时间: 2024-10-15 01:17:23
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BEREX /
页数 文件大小 规格书
22页 1754K
描述
3.0-4.0 GHz 1.5W High Linearity 5V 2-Stage Power Amplifier

BMT352_16 数据手册

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BMT352  
3.0-4.0 GHz 1.5W High Linearity 5V 2-Stage Power Amplifier  
Device Features  
+5V/355mA at operaꢀng bias condiꢀon  
Gain = 20.7 dB @ 3.5 GHz  
P1dB = 31.5 dBm @ 3.5GHz  
LTE 20M ACLR = 21.8dBm Output Power at -50dBc @ 3.5GHz  
Intergrated interstage matching  
Lead-free/Green/RoHS-compliant QFN3x3 SMT package  
Typical Performance1  
Product Descripꢀon  
The BMT352 is a high dynamic range two-stage  
power amplifier, housed in a lead-free/green/  
RoHS compliant 3x3mm² QFN package. The  
BMT352 uses a high reliability InGaP/GaAs HBT  
process technology. The BMT352 is designed for  
use where high linearity and gain are required.  
The BMT352 is able to deliver over 22 dBm out-  
put power from 3.0 to 4.0GHz while maintaining  
superior ACLR performance with a few external  
matching components. All devices are 100% RF/  
DC screened.  
Parameter  
Frequency  
Unit  
3400  
3500  
20.7  
-15.0  
-8.0  
3600  
20.6  
-16.5  
-7.0  
3700  
20.5  
-16.0  
-6.0  
3800  
20.4  
-17.0  
-5.0  
MHz  
dB  
Gain  
S11  
20.8  
-18.0  
-9.0  
dB  
S22  
OIP32  
dB  
47.0  
31.4  
45.0  
31.5  
21.8  
47.0  
31.8  
22.2  
45.0  
31.7  
21.7  
41.5  
31.4  
20.6  
dBm  
dBm  
dBm  
P1dB  
LTE 20M ACLR 21.8  
WCDMA ACLR 22.1  
Noise Figure  
22.1  
5.1  
22.4  
5.2  
22.0  
5.5  
21.0  
5.8  
dBm  
dB  
5.1  
1
Device performance _ measured on a BeRex evaluaꢀon board at 25°C, 50 Ω  
OIP3 _ measured on two tones with a output power 17dBm/ tone , F2—F1 = 1 MHz..  
2
Applicaꢀons  
*ACLR Channel Power measured at -50dBc.  
- LTE set-up: 3GPP LTE, FDD E-TM3.1, 20MHz BW, ±5MHz offset, PAR 9.75 @0.01% Prob.  
- WCDMA set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz offset, PAR 9.78 at 0.01% Prob.  
Base staꢀon /Repeaters Infrastructure/Small Cell  
Commercial/Industrial/Military wireless system  
LTE / WCDMA /CDMA Wireless Infrastructure  
Min.  
Typical  
Max.  
Unit  
GHz  
mA  
mA  
V
Bandwidth  
Ibias  
3.0  
4.0  
26  
330  
5.0  
Icq @ (Icq1 + Icq2  
VCC/Vbias  
RTH  
)
Applicaꢀon Circuits  
12.9  
°C/W  
Absolute Maximum Raꢀngs  
Parameter  
Raꢀng  
-40 to +85  
-55 to +155  
Unit  
°C  
°C  
Operaꢀng Case Temperature  
Storage Temperature  
Juncꢀon Temperature  
+200  
°C  
Operaꢀng Voltage  
Supply Current  
Input RF Power  
+6.0  
1.5  
26  
V
A
dBm  
*Operaꢀon of this device above any of these parameters may result in permanent damage.  
1
BeRex  
●website: www.berex.com  
● email: sales@berex.com  
Specificaꢀons and informaꢀon are subject to change and products may be disconꢀnued without noꢀce. BeRex is a trademark of BeRex.  
All other trademarks are the property of their respecꢀve owners. © 2017 BeRex  
Rev. A  

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