Datasheet > BM56G-10DS-0.35V(51)

BM56G-10DS-0.35V(51)

更新时间： 2024-11-22 18:09:35

品牌	Logo	应用领域
广濑 - HRS		插座连接器
页数	文件大小	规格书
1页	126K
描述
连接器类型:插座;开口间距:0.35 mm;安装间距:0.35 mm;嵌合高度(Min.):0.6 mm;嵌合高度(Max.):0.6 mm;嵌合高度:0.6 mm;PIN数:10;插拔次数:10

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BM56G-10DS-0.35V(51) 数据手册

APPLICABLE STANDARD

Operating

Storage

Temperature Range

-55C to 85C (Note 1)

-10C TO 60C

Temperature Range

Voltage

30V AC/DC

RATING

Signal contact : 1.0A

Current

SPECIFICATIONS

TEST METHOD

ITEM

REQUIREMENTS

QT AT

CONSTRUCTION

General Examination

Visually and by measuring instrument.

Confirmed visually.

According to drawing.

Marking

ELECTRIC CHARACTERISTICS

Contact Resistance

20mV AC or less 1kHz,1m A .

Signal contact resistance: 50 mMAX.

－

Insulation Resistance

Voltage Proof

100V DC.

100 M MIN.

－

150V AC for 1 min.

No flashover or breakdown.

VSWR 1.2 Max.

Frequency 0

Frequency 1

Frequency 6

1 GHz

6 GHz

20 GHz

Voltage Standing Wave

Ratio

VSWR 1.3 Max.

－

VSWR 1.5 Max

MECHANICAL CHARACTERISTICS

① Signal contact resistance: 50 mMAX.

② No damage, crack or looseness of parts.

Mechanical Operation

10times insertions and extractions.

－

Frequency 10 to 55 to 10 Hz, approx 5min,

Single amplitude 0.75 mm,10cycles,

for 3 directions.

490 m/s²duration of pulse 11 ms at 3 times

for 3 directions.

① No electrical discontinuity of 1 s.

② No damage, crack or looseness of parts.

Vibration

Shock

① No electrical discontinuity of 1 s.

② No damage, crack or looseness of parts.

－

ENVIRONMENTAL CHARACTERISTICS

Temperature -55 → +85C

① Signal contact resistance: 50 mMAX.

② Insulation resistance: 100M MIN.

③ No damage, crack or looseness of parts.

Rapid Change of

Temperature

Time

Under 5 cycles.

30 → 30 min

－

(Relocation time to chamber : within 2-3 min)

① Signal contact resistance: 50 mMAX.

② Insulation resistance: 50M MIN.

③ No damage, crack or looseness of parts.

Damp Heat

(Steady state)

Exposed at 40 ± 2 C, 90 to 95 , 96 h.

－

Signal contact resistance: 50 mMAX.

Exposed in 25 PPM for 96h, 25C, 75%.

(Refer to IEC 60068-2-42 Test Kc)

Sulfur Dioxide

COUNT

DESCRIPTION OF REVISIONS

DESIGNED

RT.SHIMIZU

CHECKED

DATE

△

20230707

20190808

DIS-H-00018586

TY.OOI

REMARKS

Note1: Include the temperature rising by current

APPROVED

CHECKED

DESIGNED

DRAWN

WR.FUKUCHI

TY.OOI

SU.SUNAGA

YONGJIN LEE

Unless otherwise specified, refer to IEC 60512.

Note QT:Qualification Test AT:Assurance Test X:Applicable Test

DRAWING NO.

ELC-387490-51-00

BM56G-10DS-0.35V(51)

PART NO.

CODE NO.

SPECIFICATION SHEET

△

1/1

HIROSE ELECTRIC CO., LTD.

FORM HD0011-2-1

CL0673-7501-0-51

中文翻译

下载PDF

与BM56G-10DS-0.35V(51)相关器件

型号	品牌	获取价格	描述	数据表
BM56G-10DS-0.35V(53)	HRS	获取价格	连接器类型:插座;开口间距:0.35 mm;安装间距:0.35 mm;嵌合高度(Min.)
BM57B0.6-10DP/2-0.3V(51)	HRS	获取价格	连接器类型:插头;开口间距:0.3 mm;安装间距:0.3 mm;嵌合高度(Min.):0
BM57B0.6-10DP/2-0.3V(53)	HRS	获取价格	连接器类型:插头;开口间距:0.3 mm;安装间距:0.3 mm;嵌合高度(Min.):0
BM57B0.6-10DS/2-0.3V(51)	HRS	获取价格	连接器类型:插座;开口间距:0.3 mm;安装间距:0.3 mm;嵌合高度(Min.):0
BM57B0.6-10DS/2-0.3V(53)	HRS	获取价格	连接器类型:插座;开口间距:0.3 mm;安装间距:0.3 mm;嵌合高度(Min.):0
BM5-8	ETC	获取价格	GENERAL-PURPOSE PHOTOVOLTAIC CELL
BM60013FV-C	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM60013FV-CE2	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM60014FV-C	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM60014FV-C_15	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation

与BM56G-10DS-0.35V(51)相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

27
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

19
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

47

产品中心

服务支持

精选活动

关于我们

帮助中心

BM56G-10DS-0.35V(51)

BM56G-10DS-0.35V(51) 数据手册

与BM56G-10DS-0.35V(51)相关器件

与BM56G-10DS-0.35V(51)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BM56G-10DS-0.35V(51)

BM56G-10DS-0.35V(51) 数据手册

与BM56G-10DS-0.35V(51)相关器件

与BM56G-10DS-0.35V(51)相关文章

您还可以找

您在本页遇到什么问题？