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BLY88C

更新时间: 2024-09-15 08:58:19
品牌 Logo 应用领域
ASI 晶体射频双极晶体管放大器
页数 文件大小 规格书
1页 17K
描述
NPN SILICON RF POWER TRANSISTOR

BLY88C 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.11Is Samacsys:N
最大集电极电流 (IC):2 A基于收集器的最大容量:45 pF
集电极-发射极最大电压:18 V配置:Single
最小直流电流增益 (hFE):10最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:O-CRPM-F4端子数量:4
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:POST/STUD MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):36 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

BLY88C 数据手册

  
BLY88C  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI BLY88C is Designed for  
12.5 V, High Band Application.  
PACKAGE STYLE .380 4L STUD  
A
.112x45°  
FEATURES:  
C
B
Common Emitter  
E
E
PG = 10 dB at 10 W/175 MHz  
Omnigold™ Metalization System  
ØC  
B
I
D
H
J
MAXIMUM RATINGS  
G
#8-32 UNC-2A  
F
2.0 A  
36 V  
IC  
E
VCBO  
VCEO  
VCES  
VEBO  
PDISS  
TJ  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
18 V  
.220 / 5.59  
.980 / 24.89  
.370 / 9.40  
.004 / 0.10  
.320 / 8.13  
.100 / 2.54  
.450 / 11.43  
.090 / 2.29  
.155 / 3.94  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
.385 / 9.78  
.007 / 0.18  
.330 / 8.38  
.130 / 3.30  
.490 / 12.45  
.100 / 2.54  
.175 / 4.45  
.750 / 19.05  
36 V  
4.0 V  
20 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
8.8 °C/W  
J
TSTG  
θJC  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCEO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 15 mA  
IC = 50 mA  
IE = 2.5 mA  
18  
V
36  
BVCES  
BVEBO  
ICBO  
V
4.0  
V
V
CB = 15 V  
1.0  
mA  
---  
VCE = 5.0 V  
IC = 250 mA  
POUT = 10 W  
5.0  
10  
200  
hFE  
V
CB = 12.5 V  
f = 1.0 MHz  
f = 175 MHz  
45  
COB  
pF  
PG  
dB  
%
VCE = 12.5 V  
60  
ηC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. C  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
1/1  
Specifications are subject to change without notice.  

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