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BLX39

更新时间: 2024-11-01 22:27:47
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 16K
描述
NPN SILICON RF POWER TRANSISTOR

BLX39 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.13最大集电极电流 (IC):5 A
基于收集器的最大容量:65 pF集电极-发射极最大电压:35 V
配置:Single最小直流电流增益 (hFE):10
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-CRPM-F4
端子数量:4最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:POST/STUD MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):100 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

BLX39 数据手册

  
BLX39  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
PACKAGE STYLE .380 STUD  
A
.112x45°  
The ASI BLX39 is Designed for  
broadband amplifier operations up to  
175 MHz.  
C
B
E
E
ØC  
FEATURES:  
B
PG = 7.6 dB min. at 40 W/175 MHz  
Emitter Resistors Ballasted  
Omnigold™ Metalization System  
I
D
H
J
G
#8-32 UNC-2A  
F
E
MAXIMUM RATINGS  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
.220 / 5.59  
.980 / 24.89  
.370 / 9.40  
.004 / 0.10  
.320 / 8.13  
.100 / 2.54  
.450 / 11.43  
.090 / 2.29  
.155 / 3.94  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
IC  
VCB  
VCE  
PDISS  
TJ  
5.0 A  
65 V  
.385 / 9.78  
.007 / 0.18  
.330 / 8.38  
.130 / 3.30  
.490 / 12.45  
.100 / 2.54  
.175 / 4.45  
.750 / 19.05  
35 V  
60 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
2.9 °C/W  
J
TSTG  
θJC  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCEO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 50 mA  
IC = 200 mA  
IE = 10 mA  
VE = 28 V  
35  
V
BVCES  
BVEBO  
ICES  
65  
V
4.0  
V
5
mA  
---  
hFE  
VCE = 5.0 V  
IC = 1.0 A  
10  
100  
Cob  
VCB = 28 V  
f = 1.0 MHz  
f = 175 MHz  
65  
pF  
PG  
7.6  
60  
dB  
%
VCE = 28 V  
PIN = 7.0 W  
ηC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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