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BLX14

更新时间: 2024-10-31 22:27:47
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 17K
描述
NPN SILICON RF POWER TRANSISTOR

BLX14 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.13最大集电极电流 (IC):4 A
基于收集器的最大容量:125 pF集电极-发射极最大电压:36 V
配置:Single最小直流电流增益 (hFE):15
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-CRPM-F4
端子数量:4最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:POST/STUD MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):88 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

BLX14 数据手册

  
BLX14  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI BLX14 is Designed for HF  
and VHF band applications.  
PACKAGE STYLE .500 4L STUD (A)  
A
.112 x 45°  
Ø .630 NOM  
C
FEATURES:  
E
E
B
C
PG = 13 dB min. at 15 W/1.6 MHz  
d3 = -40 dB typ. at 15 W(PEP)  
Omnigold™ Metalization System  
D
B
E
G
F
1/4-28 UNF-2A  
H
MAXIMUM RATINGS  
IC  
4.0 A  
85 V  
VCBO  
VEBO  
VCEO  
PDISS  
TJ  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
4.0 V  
.220 / 5.59  
.230 / 5.84  
1.050 / 26.67  
.555 / 14.10  
.505 / 12.83  
.007 / 0.18  
A
B
C
D
E
F
36 V  
.545 / 13.84  
.495 / 12.57  
.003 / 0.08  
88 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +200 °C  
1.99 °C/W  
.830 / 21.08  
.198 / 5.03  
.185 / 4.70  
G
H
.497 / 12.62  
.530 / 13.46  
TSTG  
θJC  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCBO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 25 mA  
IC = 25 mA  
IC = 50 mA  
IE = 10 mA  
85  
85  
36  
4.0  
15  
V
BVCER  
BVCEO  
BVEBO  
hFE  
V
RBE = 5.0  
V
V
V
CE = 6.0 V  
IC = 1.4 A  
IC = 3.0 A  
100  
125  
---  
V
CE = 20 V  
CB = 30 V  
250  
115  
fT  
MHz  
pF  
V
f = 1.0 MHz  
CC  
13  
GP  
d3  
dB  
dB  
V
CE = 28 V  
ICQ =2.0 A  
POUT = 15 W(PEP)  
-40  
f = 1.6 MHz  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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