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BLX13C

更新时间: 2024-10-31 21:55:35
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 17K
描述
NPN SILICON RF POWER TRANSISTOR

BLX13C 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.09最大集电极电流 (IC):3 A
集电极-发射极最大电压:36 V配置:Single
最小直流电流增益 (hFE):10最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:O-CRPM-F4端子数量:4
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:POST/STUD MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):73 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

BLX13C 数据手册

  
BLX13C  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI BLX13C is Designed for  
28 V, Linear Amplifier, class A and AB in  
the HF and VHF bands.  
PACKAGE STYLE .380" 4L STUD  
A
.112x45°  
C
FEATURES:  
B
E
E
PG = 21 dB Typical at 25 W/ 28 MHz  
ØC  
B
Omnigoldl™ Metallization System  
I
D
H
J
MAXIMUM RATINGS  
G
#8-32 UNC-2A  
F
3.0 A  
36 V  
IC  
VCE  
VCB  
PDISS  
TJ  
E
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
.220 / 5.59  
.980 / 24.89  
.370 / 9.40  
.004 / 0.10  
.320 / 8.13  
.100 / 2.54  
.450 / 11.43  
.090 / 2.29  
.155 / 3.94  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
65 V  
.385 / 9.78  
.007 / 0.18  
.330 / 8.38  
.130 / 3.30  
.490 / 12.45  
.100 / 2.54  
.175 / 4.45  
.750 / 19.05  
73 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
2.39 °C/W  
TSTG  
θJC  
J
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCES  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 10 mA  
IC = 50 mA  
IE = 10 mA  
VCB = 36 V  
VCE = 5.0 V  
65  
V
BVCEO  
BVEBO  
ICES  
36  
V
4.0  
V
4.0  
mA  
---  
hFE  
IC = 1.25A  
10  
100  
Cob  
V
CB = 28 V  
f = 1.0 MHz  
f = 28 MHz  
50  
21  
pF  
PG  
dB  
VCE = 28 V  
POUT = 25 W  
45  
%
η
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. B  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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