Datasheet > BLW87

BLW87

更新时间： 2024-11-01 08:58:19

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
2页	20K
描述
NPN SILICON RF POWER TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BLW87 数据手册

BLW87

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI BLW87 is Designed for

Class C, 12.5 V High Band Applications

up to 175 MHz.

PACKAGE STYLE .380 4L FLG

FEATURES:

.112 x 45°

Ø.125 NOM.

FULL R

• Common Emitter

• P_G= 10 dB at 25 W/175 MHz

• Omnigold™ Metalization System

.125

MAXIMUM RATINGS

4.0 A

36 V

I_C

V_CBO

V_CEO

V_EBO

P_DISS

T_J

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

.220 / 5.59

.785 / 19.94

.720 / 18.29

.970 / 24.64

.230 / 5.84

18 V

.730 / 18.54

.980 / 24.89

.385 / 9.78

.006 / 0.15

.105 / 2.67

.180 / 4.57

.280 / 7.11

.255 / 6.48

4.0 V

65 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

3.5 °C/W

.004 / 0.10

.085 / 2.16

.160 / 4.06

.240 / 6.10

T_STG

θ_JC

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 50 mA

I_C= 15 mA

I_E= 5.0 mA

BV_CES

BV_EBO

I_CBO

4.0

_CB= 15 V

_CE= 5.0 V

5.0

---

I_C= 250 mA

P_OUT= 25 W

h_FE

_CB= 12.5 V

f = 1.0 MHz

f = 175 MHz

110

C_OB

P_G

V_CE= 12.5 V

η_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/2

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

中文翻译

下载PDF

与BLW87相关器件

型号	品牌	获取价格	描述	数据表
BLW89	NJSEMI	获取价格	Trans GP BJT NPN 36V 3A 4-Pin SOT-123A
BLW898	NXP	获取价格	UHF linear power transistor
BLW90	NXP	获取价格	UHF power transistor
BLW90	NJSEMI	获取价格	Trans GP BJT NPN 30V 0.62A 4-Pin CRPM
BLW91	NJSEMI	获取价格	Trans GP BJT NPN 30V 0.62A 4-Pin CRPM
BLW96	NXP	获取价格	HF/VHF power transistor
BLW96	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
BLW96	NJSEMI	获取价格	Trans GP BJT NPN 55V 12A 4-Pin CRFM Bulk
BLW96/B	ETC	获取价格	TRANSISTOR RF SOT-121
BLW97	NXP	获取价格	HF power transistor