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BLW83MP

更新时间: 2024-11-21 20:08:19
品牌 Logo 应用领域
ASI /
页数 文件大小 规格书
1页 14K
描述
Transistor,

BLW83MP 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
最大集电极电流 (IC):3 A最小直流电流增益 (hFE):10
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):80 W子类别:Other Transistors
Base Number Matches:1

BLW83MP 数据手册

  
BLW83MP  
MATCHED PAIR NPN SILICON RF POWER  
TRANSISTOR  
DESCRIPTION:  
The ASI BLW83MP is Designed for  
use in transmitting amplifiers  
operatimg in theh.f. and v.h.f. bands  
and for applications as linear amplifier  
in class-A and AB.  
PACKAGE STYLE .380 4L FLG  
.112 x 45°  
B
A
Ø.125 NOM.  
FULL R  
E
C
E
FEATURES:  
J
.125  
PG = 20 dB min. at 10 W/30 MHz  
IMD3 = -30 dBc max. at 10 W(PEP)  
Omnigold™ Metalization System  
Color coded matched pairs  
B
C
D
E
F
I
H
G
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
MAXIMUM RATINGS  
DIM  
.220 / 5.59  
.785 / 19.94  
.720 / 18.29  
.970 / 24.64  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
IC  
3.0 A  
65 V  
.730 / 18.54  
.980 / 24.89  
.385 / 9.78  
.006 / 0.15  
.105 / 2.67  
.180 / 4.57  
.280 / 7.11  
.255 / 6.48  
VCES  
VCEO  
VEBO  
PDISS  
TJ  
36 V  
.004 / 0.10  
.085 / 2.16  
.160 / 4.06  
4.0 V  
.240 / 6.10  
J
80 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
2.2 °C/W  
TSTG  
θJC  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCES  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 10 mA  
IC = 50 mA  
IE = 10 mA  
VCE = 36 V  
VCE = 5.0 V  
65  
V
BVCEO  
BVEBO  
ICES  
36  
V
4.0  
V
5
mA  
---  
hFE  
IC = 1.25 A  
10  
20  
100  
Cob  
VCB = 12.5 V  
f = 1.0 MHz  
f = 30 MHz  
100  
pF  
GPE  
21  
---  
dB  
dB  
VCC = 26 V  
ICQ = 25 mA  
IMD3  
-30  
POUT = 10 W(PEP)  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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