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BLW81

更新时间: 2024-11-01 12:50:03
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 18K
描述
NPN SILICON RF POWER TRANSISTOR

BLW81 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.09最大集电极电流 (IC):2.5 A
集电极-发射极最大电压:17 V配置:Single
最小直流电流增益 (hFE):10最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:O-CRPM-F4端子数量:4
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:POST/STUD MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):40 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

BLW81 数据手册

  
BLW81  
NPN SILICON RF POWER TRANSISTOR  
PACKAGE STYLE .280 4L STUD  
DESCRIPTION:  
A
The ASI BLW81 is Designed for  
Class A,B or C UHF & VHF  
Communications  
45°  
C
E
B
E
FEATURES:  
B
C
D
PG = 6 dB Typical at 470 MHz  
J
Omnigold™ Metallization System  
E
I
F
G
MAXIMUM RATINGS  
H
K
#8-32 UNC  
2.5 A  
IC  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
36 V  
VCB  
1.010 / 25.65  
.220 / 5.59  
.270 / 6.86  
.003 / 0.08  
.117 / 2.97  
1.055 / 26.80  
.230 /5.84  
.285 / 7.24  
.007 / 0.18  
.137 / 3.48  
A
B
C
D
E
F
G
H
I
40 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
4.4 °C/W  
PDISS  
TJ  
.572 / 14.53  
.130 / 3.30  
TSTG  
θJC  
.245 / 6.22  
.255 / 6.48  
.640 / 16.26  
.175 / 4.45  
.275 / 6.99  
.217 / 5.51  
.285 / 7.24  
J
K
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCEO  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 100 Ma  
IC = 25 Ma  
IE = 10 Ma  
17  
36  
4
V
VBE = 0 V  
BVCES  
BVEBO  
ICES  
V
V
VCE = 17 V  
CE = 5.0 V  
10  
mA  
---  
V
IC = 1.25 A  
10  
hFE  
V
CB = 12.5 V  
F = 1. 0 MHz  
F = 470 MHz  
34  
COB  
pF  
W
10.0  
6.0  
60  
12.0  
13.5  
POUT  
PG  
η
DB  
VCE = 12.5 V  
PIN = 2.5 W  
%
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV 0  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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