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BLW80

更新时间: 2024-01-20 10:18:51
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 18K
描述
NPN SILICON RF POWER TRANSISTOR

BLW80 数据手册

  
BLW80  
NPN SILICON RF POWER TRANSISTOR  
PACKAGE STYLE .280 4L STUD  
DESCRIPTION:  
A
The ASI BLW80 is Designed for  
Class A,B or C UHF & VHF  
Communication applications up to 470  
MHz.  
45°  
C
E
B
E
B
FEATURES:  
C
D
J
PG = 8.0 dB Typical at 470 MHz  
Omnigold™ Metallization System  
E
I
F
G
H
K
#8-32 UNC  
MAXIMUM RATINGS  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
1.0 A  
IC  
1.010 / 25.65  
.220 / 5.59  
.270 / 6.86  
.003 / 0.08  
.117 / 2.97  
1.055 / 26.80  
.230 /5.84  
.285 / 7.24  
.007 / 0.18  
.137 / 3.48  
A
B
C
D
E
F
G
H
I
36 V  
VCES  
17 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
10.3 °C/W  
PDISS  
TJ  
.572 / 14.53  
.130 / 3.30  
.245 / 6.22  
.255 / 6.48  
.640 / 16.26  
TSTG  
θJC  
.175 / 4.45  
.275 / 6.99  
.217 / 5.51  
.285 / 7.24  
J
K
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCEO  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 50 mA  
IC = 10 mA  
IE = 4.0 mA  
17  
36  
4
V
VBE = 0 V  
BVCES  
BVEBO  
ICES  
V
V
V
CE = 17 V  
CE = 5 V  
4.0  
mA  
---  
V
V
IC = 5.0 A  
10  
35  
hFE  
IC = 1.5 A  
IB = 300 mA  
0.75  
VCE  
VCB = 12.5 V  
F = 1. 0 MHz  
F = 470 MHz  
14  
15  
CC  
pF  
DB  
8.0  
60  
PG  
VCE = 12.5 V  
POUT = 4.0 W  
%
η
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV 0  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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