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BLW77

更新时间: 2024-11-01 08:58:19
品牌 Logo 应用领域
ASI 晶体射频双极晶体管放大器局域网
页数 文件大小 规格书
1页 39K
描述
NPN SILICON RF POWER TRANSISTOR

BLW77 技术参数

生命周期:Active包装说明:FLANGE MOUNT, O-CRFM-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.13
Is Samacsys:N外壳连接:EMITTER
最大集电极电流 (IC):12 A集电极-发射极最大电压:35 V
配置:Single最小直流电流增益 (hFE):15
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-CRFM-F4
端子数量:4最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):245 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

BLW77 数据手册

  
BLW77  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI BLW77 is Designed for use in  
class-AB or class-B operated high power  
transmitters in the H.F. and V.H.F bands  
and, as a Linear amplifier in the H.F.  
band.  
PACKAGE STYLE .500 4L FLG  
FEATURES:  
PG = 12 dB min. at 15-30 W/1.6-28 MHz  
Common Emitter  
Omnigold™ Metalization System  
MAXIMUM RATINGS  
IC  
VCB  
VCE  
PDISS  
TJ  
12 A  
70 V  
35 V  
1 = COLLECTOR  
2 = BASE  
245 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
0.71 °C/W  
3 & 4 = EMITTER  
TSTG  
θJC  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCEO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 100 mA  
IC = 50 mA  
IE = 20 mA  
VE = 35 V  
35  
V
BVCES  
BVEBO  
ICES  
70  
V
3.0  
V
20  
80  
mA  
---  
hFE  
VCE = 5.0 V  
IC = 7.0 A  
15  
Cc  
VCB = 28 V  
f = 1.0 MHz  
225  
pF  
GP  
d3  
η
dB  
dB  
%
12  
VCE = 28 V  
IC(ZS) = 0.1 A  
f = 1.6-28 MHz  
-30  
PL = 15-130 W (PEP)  
37.5  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. B  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

BLW77 替代型号

型号 品牌 替代类型 描述 数据表
MRF464 ASI

类似代替

NPN SILICON RF POWER TRANSISTOR
2SC2510 TOSHIBA

功能相似

TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28v SUPPLY VOLTAGE USE)

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