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BLW34

更新时间: 2024-11-27 08:58:19
品牌 Logo 应用领域
ASI 晶体射频双极晶体管放大器
页数 文件大小 规格书
1页 18K
描述
NPN SILICON RF POWER TRANSISTOR

BLW34 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.07Is Samacsys:N
最大集电极电流 (IC):3.5 A集电极-发射极最大电压:30 V
配置:Single最小直流电流增益 (hFE):20
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:O-CRPM-F4
端子数量:4最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:POST/STUD MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):31 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

BLW34 数据手册

  
BLW34  
NPN SILICON RF POWER TRANSISTOR  
PACKAGE STYLE .280 4L STUD  
DESCRIPTION:  
A
4 5°  
The ASI BLW34 is Designed for use  
C
in UHF amplifiers up to 860 MHz.  
B
E
E
B
FEATURES:  
C
D
PG = 10.2 dB Typical at 860 MHz  
Omnigold™ Metallization System  
J
E
I
F
G
H
K
# 8-3 2 U N C  
M A X IM U M  
MAXIMUM RATINGS  
M IN IM U M  
3.5 A  
IC  
D IM  
inches  
/
m m  
inches / m m  
1 .0 1 0 / 25 .6 5  
.2 2 0 / 5.59  
.2 7 0 / 6.86  
.0 0 3 / 0.08  
.1 1 7 / 2.97  
1 .0 5 5 / 26 .8 0  
.2 3 0 /5 .8 4  
A
B
C
D
E
F
G
H
I
50 V  
VCB  
PDISS  
TJ  
.2 8 5 / 7.24  
.0 0 7 / 0.18  
.1 3 7 / 3.48  
31 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
5.6 °C/W  
.5 7 2 / 1 4.53  
.1 3 0 / 3.30  
.2 4 5 / 6.22  
.2 5 5 / 6.48  
.6 4 0 / 1 6.26  
TSTG  
.1 7 5 / 4.45  
.2 7 5 / 6.99  
.2 1 7 / 5.51  
.2 8 5 / 7.24  
J
K
θJC  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 60 mA  
IC = 8.0 mA  
IE = 4.0 mA  
VCE = 30 V  
VCE = 25 V  
30  
50  
4
BVCEO  
BVCES  
BVEBO  
ICES  
V
VBE = 0 V  
V
V
2
mA  
---  
IC = 600 mA  
20  
40  
hFE  
13.5  
8.4  
Cc  
Cre  
Ccs  
pF  
VCB = 25 V  
f = 1.0 MHz  
f = 224 MHz  
1.2  
dB  
VCE = 25 V  
POUT 2.15 W  
IC = 600 mA  
10.2  
GP  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV 0  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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