Datasheet > BLV8N60

BLV8N60

更新时间： 2024-11-25 03:20:51

品牌	Logo	应用领域
伊泰克 - ESTEK		/
页数	文件大小	规格书
6页	386K
描述
N-channel Enhancement Mode Power MOSFET

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BLV8N60 数据手册

BLV8N60

N-channel Enhancement Mode Power MOSFET

BV_DSS

R_DS(ON)

I_D

600V

1.2Ω

7.5A

• Avalanche Energy Specified

• Fast Switching

• Simple Drive Requirements

Description

This advanced high voltage MOSFET is produced

using Belling’s proprietary DMOS technology.

Designed for high efficiency switch mode power supply

Absolute Maximum Ratings

(

T_C=25^oC unless otherwise noted )

Symbol

Parameter

Drain-Source Voltage

Value

Units

V_DS

V_GS

600

+ 20

Gate-Source Voltage

Continuous Drain Current

Continuous Drain Current ( T_C=100 ^oC

7.5

I_D

)

4.6

I_DM

P_D

Drain Current (pulsed)

Power Dissipation

(Note 1)

147

Linear Derating Factor

1.18

℃

E_AS

I_AR

Single Pulsed Avalanche Energy (Note 2)

230

Avalanche Current

(Note 1)

7.5

E_AR

Repetitive Avalanche Energy

14.7

^oC

Operating Junction Temperature Range

Storage Temperature Range

-55 to +150

T_SDG

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to case

Value

0.85

Units

R_{th j-c}

R_{th j-a}

Max.

℃/ W

Thermal Resistance, Junction to Ambient Max.

62.5

- 1 -

Total 6 Pages

12 3 4 5 6

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