BLV859

更新时间： 2024-01-10 20:19:19

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	18K
描述
NPN SILICON RF POWER TRANSISTOR

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BLV859 数据手册

BLV859

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI BLV859 is Designed for

Television Band IV & V Applications

up to 860 MHz.

PACKAGE STYLE .400 BAL FLG(C)

.080x45°

FULL R

(4X).060 R

FEATURES:

• Common Emitter

• P_G= 10 dB at 150 W/860 MHz

• Omnigold™ Metalization System

.1925

MAXIMUM RATINGS

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

15 A

28 V

I_C

.220 / 5.59

.230 / 5.84

.210 / 5.33

V_CEO

V_CBO

V_EBO

P_DISS

T_J

.120 / 3.05

.380 / 9.65

.780 / 19.81

.130 / 3.30

.390 / 9.91

.820 / 20.83

60 V

.435 / 11.05

1.090 / 27.69

2.5 V

1.335 / 33.91

.003 / 0.08

.060 / 1.52

.082 / 2.08

1.345 / 34.16

.007 / 0.18

.070 / 1.78

.100 / 2.54

.205 / 5.21

.407 / 10.34

.870 / 22.10

145 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

1.20 °C/W

.395 / 10.03

.850 / 21.59

T_STG

θ_JC

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 30 mA

I_C= 60 mA

I_E= 1.2 mA

BV_CEO

BV_EBO

I_CBO

2.5

_CB= 27 V

_CE= 20 V

_CE= 25 V

3.0

6.0

140

---

I_CEO

I_C= 2.25 A

h_FE

V_CB= 26 V

f = 1.0 MHz

f = 860 MHz

C_OB

V_CC= 25 V

I_CQ= 2 X 2.25 A

P_G

P_OUT= 20 W

_CC= 25 V

VSWR = 50:1 @ all phase angles

-54

IMD₁

dBc

I_CQ= 2 X 2.25 A P_OUT= 20 W PEP

No Degradation in Output

Power

VSRW

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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