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BLV859

更新时间: 2024-11-25 12:50:03
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 18K
描述
NPN SILICON RF POWER TRANSISTOR

BLV859 数据手册

  
BLV859  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI BLV859 is Designed for  
Television Band IV & V Applications  
up to 860 MHz.  
PACKAGE STYLE .400 BAL FLG(C)  
A
.080x45°  
B
FULL R  
(4X).060 R  
FEATURES:  
E
M
D
Common Emitter  
C
PG = 10 dB at 150 W/860 MHz  
Omnigold™ Metalization System  
.1925  
F
G
H
N
I
L
K
MAXIMUM RATINGS  
J
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
15 A  
28 V  
IC  
.220 / 5.59  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
.210 / 5.33  
VCEO  
VCBO  
VEBO  
PDISS  
TJ  
.120 / 3.05  
.380 / 9.65  
.780 / 19.81  
.130 / 3.30  
.390 / 9.91  
.820 / 20.83  
60 V  
.435 / 11.05  
1.090 / 27.69  
2.5 V  
1.335 / 33.91  
.003 / 0.08  
.060 / 1.52  
.082 / 2.08  
1.345 / 34.16  
.007 / 0.18  
.070 / 1.78  
.100 / 2.54  
.205 / 5.21  
.407 / 10.34  
.870 / 22.10  
145 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
1.20 °C/W  
J
K
L
.395 / 10.03  
.850 / 21.59  
M
N
TSTG  
θJC  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCBO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 30 mA  
IC = 60 mA  
IE = 1.2 mA  
60  
V
28  
BVCEO  
BVEBO  
ICBO  
V
2.5  
V
V
V
V
CB = 27 V  
CE = 20 V  
CE = 25 V  
3.0  
6.0  
140  
mA  
mA  
---  
ICEO  
IC = 2.25 A  
30  
10  
hFE  
VCB = 26 V  
f = 1.0 MHz  
f = 860 MHz  
75  
COB  
pF  
VCC = 25 V  
ICQ = 2 X 2.25 A  
PG  
dB  
POUT = 20 W  
CC = 25 V  
VSWR = 50:1 @ all phase angles  
-54  
IMD1  
dBc  
V
ICQ = 2 X 2.25 A POUT = 20 W PEP  
No Degradation in Output  
Power  
VSRW  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. B  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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