Datasheet > BLV830

BLV830

更新时间： 2024-02-11 03:51:32

品牌	Logo	应用领域
伊泰克 - ESTEK		/
页数	文件大小	规格书
6页	375K
描述
N-channel Enhancement Mode Power MOSFET

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BLV830 数据手册

BLV830

N-channel Enhancement Mode Power MOSFET

BV_DSS

R_DS(ON)

I_D

500V

1.5Ω

4.5A

• Avalanche Energy Specified

• Fast Switching

• Simple Drive Requirements

Description

This advanced high voltage MOSFET is produced

using Belling’s proprietary DMOS technology.

Designed for high efficiency switch mode power supply

Absolute Maximum Ratings

(

T_C=25^oC unless otherwise noted )

Symbol

Parameter

Drain-Source Voltage

Value

Units

V_DS

V_GS

500

+ 20

Gate-Source Voltage

Continuous Drain Current

Continuous Drain Current ( T_C=100 ^oC

Drain Current (pulsed) (Note 1)

Power Dissipation

4.5

I_D

)

2.85

I_DM

P_D

℃

Linear Derating Factor

0.59

E_AS

I_AR

Single Pulsed Avalanche Energy (Note2)

Avalanche Current

250

4.5

E_AR

Repetitive Avalanche Energy

Operating Junction Temperature Range

Storage Temperature Range

7.5

^oC

-55 to +150

T_SDG

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to case

Value

1.67

Units

℃

/ W

R_{th j-c}

R_{th j-a}

Max.

Thermal Resistance, Junction to Ambient Max.

62.5

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