Datasheet > BLV730

BLV730

更新时间： 2024-09-23 12:50:55

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
6页	509K
描述
N-channel Enhancement Mode Power MOSFET

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BLV730 数据手册

BLV730

N-channel Enhancement Mode Power MOSFET

BV_DSS

R_DS(ON)

I_D

400V

1.0Ω

5.5A

• Avalanche Energy Specified

• Fast Switching

• Simple Drive Requirements

Description

This advanced high voltage MOSFET is produced

using Belling’s proprietary DMOS technology.

Designed for high efficiency switch mode power supply

Absolute Maximum Ratings

(

T_C=25^oC unless otherwise noted )

Symbol

Parameter

Drain-Source Voltage

Value

Units

V_DS

V_GS

400

+ 20

Gate-Source Voltage

Continuous Drain Current

Continuous Drain Current ( T_C=100 ^oC

Drain Current (pulsed) (Note 1)

Power Dissipation

5.5

I_D

)

3.5

I_DM

P_D

℃

Linear Derating Factor

0.59

E_AS

I_AR

Single Pulsed Avalanche Energy (Note2)

Avalanche Current

290

5.5

E_AR

Repetitive Avalanche Energy

Operating Junction Temperature Range

Storage Temperature Range

7.4

^oC

-55 to +150

T_SDG

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to case

Value

1.7

Units

℃

/ W

R_{th j-c}

R_{th j-a}

Max.

Thermal Resistance, Junction to Ambient Max.

62.5

http://www.belling.com.cn

3/28/2007

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