Datasheet > BLV6N60

BLV6N60

更新时间： 2024-11-25 03:21:03

品牌	Logo	应用领域
伊泰克 - ESTEK		/
页数	文件大小	规格书
6页	408K
描述
N-channel Enhancement Mode Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BLV6N60 数据手册

BLV6N60

N-channel Enhancement Mode Power MOSFET

BV_DSS

R_DS(ON)

I_D

600V

1.2Ω

• Avalanche Energy Specified

• Fast Switching

• Simple Drive Requirements

Description

This advanced high voltage MOSFET is produced

using Belling’s proprietary DMOS technology.

Designed for high efficiency switch mode power supply

Absolute Maximum Ratings

(

T_C=25^oC unless otherwise noted )

Symbol

Parameter

Drain-Source Voltage

Value

Units

V_DS

V_GS

600

Gate-Source Voltage

+ 20

Continuous Drain Current

Continuous Drain Current ( T_C=100 ^oC

I_D

)

3.8

I_DM

P_D

Drain Current (pulsed)

Power Dissipation

(Note 1)

125

℃

Linear Derating Factor

490

E_AS

I_AR

Single Pulsed Avalanche Energy (Note 2)

Avalanche Current

(Note 1)

E_AR

Repetitive Avalanche Energy

12.5

^oC

Operating Junction Temperature Range

Storage Temperature Range

-55 to +150

T_SDG

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to case

Value

Units

℃

/ W

R_{th j-c}

R_{th j-a}

Max.

Thermal Resistance, Junction to Ambient Max.

62.5

- 1 -

Total 6 Pages

12 3 4 5 6

中文翻译

下载PDF

与BLV6N60相关器件

型号	品牌	获取价格	描述	数据表
BLV7002	BELLING	获取价格	BLV7002
BLV730	BELLING	获取价格	N-channel Enhancement Mode Power MOSFET
BLV740	BELLING	获取价格	N-channel Enhancement Mode Power MOSFET
BLV75/12	NXP	获取价格	VHF power transistor
BLV7N60	ESTEK	获取价格	N-channel Enhancement Mode Power MOSFET
BLV80/28	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 33V V(BR)CEO \| 8.5A I(C) \| SOT-121
BLV80-28	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
BLV830	ESTEK	获取价格	N-channel Enhancement Mode Power MOSFET
BLV840	ESTEK	获取价格	N-channel Enhancement Mode Power MOSFET
BLV857	NXP	获取价格	UHF linear push-pull power transistor