Datasheet > BLV640

BLV640

更新时间： 2024-11-25 12:23:03

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
6页	438K
描述
N-channel Enhancement Mode Power MOSFET

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BLV640 数据手册

BLV640

N-channel Enhancement Mode Power MOSFET

BV_DSS

R_DS(ON)

I_D

200V

0.18Ω

18A

• Avalanche Energy Specified

• Fast Switching

• Simple Drive Requirements

Description

This advanced low voltage MOSFET is produced

using Belling’s proprietary MOS technology.

Designed for high efficiency switch mode power supply

Absolute Maximum Ratings

(

T_C=25^oC unless otherwise noted )

Symbol

Parameter

Drain-Source Voltage

Value

Units

V_DS

V_GS

200

Gate-Source Voltage

+ 30

Continuous Drain Current

Continuous Drain Current ( T_C=100 ^oC

Drain Current (pulsed) (Note 1)

Power Dissipation

I_D

)

I_DM

P_D

125

Linear Derating Factor

1.0

℃

E_AS

I_AR

Single Pulsed Avalanche Energy (Note2)

Avalanche Current

580

E_AR

Repetitive Avalanche Energy

Operating Junction Temperature Range

Storage Temperature Range

^oC

-55 to +150

T_SDG

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to case

Value

0.5

Units

R_{th j-c}

R_{th j-a}

Max.

℃/ W

Thermal Resistance, Junction to Ambient Max.

62.5

http://www.belling.com.cn

- 1 -

2008.08.08

Total 6 Pages

12 3 4 5 6

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