Datasheet > BLV5N60

BLV5N60

更新时间： 2024-01-20 13:21:15

品牌	Logo	应用领域
伊泰克 - ESTEK		/
页数	文件大小	规格书
6页	396K
描述
N-channel Enhancement Mode Power MOSFET

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BLV5N60 数据手册

BLV5N60

N-channel Enhancement Mode Power MOSFET

BV_DSS

R_DS(ON)

I_D

600V

2.5Ω

4.5A

• Avalanche Energy Specified

• Fast Switching

• Simple Drive Requirements

Description

This advanced high voltage MOSFET is produced

using Belling’s proprietary DMOS technology.

Designed for high efficiency switch mode power supply

Absolute Maximum Ratings

(

T_C=25^oC unless otherwise noted )

Symbol

Parameter

Drain-Source Voltage

Value

Units

V_DS

V_GS

600

+ 20

Gate-Source Voltage

Continuous Drain Current

Continuous Drain Current ( T_C=100 ^oC

Drain Current (pulsed) (Note 1)

Power Dissipation

4.5

I_D

)

2.6

I_DM

P_D

104

Linear Derating Factor

0.83

℃

E_AS

I_AR

Single Pulsed Avalanche Energy (Note2)

Avalanche Current

218

4.5

E_AR

Repetitive Avalanche Energy

Operating Junction Temperature Range

Storage Temperature Range

10.4

^oC

-55 to +150

T_SDG

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to case

Value

1.2

Units

℃/ W

R_{th j-c}

R_{th j-a}

Max.

Thermal Resistance, Junction to Ambient Max.

62.5

- 1 -

Total 6 Pages

12 3 4 5 6

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