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BLV11

更新时间: 2024-11-24 08:58:19
品牌 Logo 应用领域
ASI 晶体射频双极晶体管放大器局域网
页数 文件大小 规格书
1页 25K
描述
NPN SILICON RF POWER TRANSISTOR

BLV11 技术参数

生命周期:Active包装说明:FLANGE MOUNT, O-CRFM-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.13
Is Samacsys:N最大集电极电流 (IC):3 A
集电极-发射极最大电压:18 V配置:Single
最小直流电流增益 (hFE):10最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:O-CRFM-F4端子数量:4
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):36 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):800 MHz
Base Number Matches:1

BLV11 数据手册

  
BLV11  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI BLV11 is Designed for  
Class C, 12.5 Volt operation in FM  
Amplifier Applications up to 250 MHz.  
FEATURES INCLUDE:  
PG = 9.0 dB Typical at 175 MHz  
Emitter Ballasting  
PACKAGE STYLE .375 4L FLG  
Omnigold™ Metalization System  
MAXIMUM RATINGS  
3.0 A  
18 V  
IC  
VCE  
VCB  
PDISS  
TJ  
36 V  
37 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
4.6 OC/W  
1 = Collector 2 = Base  
3 & 4 = Emitter  
TSTG  
θJC  
ORDER CODE: ASI10492  
CHARACTERISTICS TC = 25 O  
C
SYMBOL  
BVCBO  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 20 mA  
IC = 50 mA  
IC = 50 mA  
IE = 5.0 mA  
VCB = 15 V  
VCE = 5.0 V  
36  
36  
18  
4.0  
V
BVCES  
BVCEO  
BVEBO  
ICBO  
V
V
V
2.0  
mA  
---  
hFE  
IC = 250 mA  
POUT = 15 W  
5.0  
50  
45  
Cob  
VCB = 12.5 V  
VCE = 13.5 V  
f = 1.0 MHz  
f = 175 MHz  
pF  
PG  
8.0  
60  
9.0  
65  
dB  
%
ηC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

BLV11 替代型号

型号 品牌 替代类型 描述 数据表
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