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BLU99

更新时间: 2024-09-23 12:56:19
品牌 Logo 应用领域
ASI 晶体射频双极晶体管
页数 文件大小 规格书
1页 17K
描述
NPN SILICON RF POWER TRANSISTOR

BLU99 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-XRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.13最大集电极电流 (IC):2.5 A
集电极-发射极最大电压:16 V配置:Single
最小直流电流增益 (hFE):25最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:O-XRPM-F4端子数量:4
最高工作温度:200 °C封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:POST/STUD MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):12.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管元件材料:SILICON
标称过渡频率 (fT):4000 MHzBase Number Matches:1

BLU99 数据手册

  
BLU99  
NPN SILICON RF POWER TRANSISTOR  
PACKAGE STYLE .280 4L STUD  
A
45°  
DESCRIPTION:  
C
The ASI BLU99 is Designed for use  
in UHF mobile radio transmitters  
aplications up to 470 MHZ  
E
B
E
B
C
D
FEATURES:  
J
E
I
PG = 10.5 dB Min. at 470 MHz  
Omnigold™ Metallization System  
F
G
H
K
#8 -32 U N C  
M A X IM U M  
MAXIMUM RATINGS  
M IN IM U M  
D IM  
inch e s  
/
m m  
inch e s / m m  
2.5 A  
IC  
1.010 / 2 5.65  
.2 20 / 5.59  
.2 70 / 6.86  
.0 03 / 0.08  
.1 17 / 2.97  
1.055 / 2 6.80  
.2 30 /5.84  
A
B
C
D
E
F
G
H
I
36 V  
VCB  
PDISS  
TJ  
.2 85 / 7.24  
.0 07 / 0.18  
.1 37 / 3.48  
17.5 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
10 °C/W  
.5 72 / 14.53  
.1 30 / 3.30  
.2 45 / 6.22  
.2 55 / 6.48  
.6 40 / 16.26  
TSTG  
.1 75 / 4.45  
.2 75 / 6.99  
.2 17 / 5.51  
.2 85 / 7.24  
J
K
θJC  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 20 mA  
IC = 10 mA  
IE = 1.0 mA  
VCE = 10 V  
16  
36  
3.0  
25  
BVCEO  
BVCBO  
BVEBO  
hFE  
V
V
V
IC = 600 mA  
Pout = 5.0 W  
100  
---  
VCB = 12.5 V  
f = 1.0 MHz  
f = 470 MHz  
7.5  
CC  
pF  
10.5  
60  
PG  
dB  
%
VCE = 12.5  
ηC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV 0  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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