Datasheet > BLM12N08

BLM12N08

更新时间： 2024-11-06 14:56:03

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
8页	1301K
描述
The BLM12N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

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BLM12N08 数据手册

Green Product

BLM12N08

80V N-Channel Power MOSFET

DESCRIPTION

KEY CHARACTERISTICS

The BLM12N08 uses advanced trench technology to provide ● V_DS= 80V,I_D= 70A

excellent R_DS(ON), low gate charge. It can be used in a wide

variety of applications.

R_DS(ON)< 11.5mΩ @ V_GS=10V

● Special process technology for high ESD capability

● High density cell design for lower Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

100% UIS TESTED！

Application

●Power switching application

●Hard switched and High frequency circuits

●Uninterruptible power supply

100% DVDS TESTED！

Schematic diagram

TO-252-2L Top View

TO-263 Top View

TO-220 Top View

Package Marking And Ordering Information

Device Marking

Ordering Codes

BLM12N08-P

BLM12N08-D

BLM12N08-B

Package

Product Code

Packing

M12N08

TO-220

TO-252-2L

TO-263

BLM12N08

Tube

M12N08

Tape Reel

M12N08

Absolute Maximum Ratings (TA=25℃

Parameter

unless otherwise noted)

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

VGS

Drain Current-Continuous

I_D

Drain Current-Pulsed ^{(Note 1)}

280

I_DM

125

℃

Maximum Power Dissipation(Tc=25℃)

Single pulse avalanche energy^{(Note 2)}

Operating Junction and Storage Temperature Range

P_D

700

E_AS

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case

R_θJC

R_θJA

1.2

℃/W

Thermal Resistance,Junction-to-Ambient

62.5

Page1

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Primary

12 3 4 5 6 7 8

中文翻译

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